“Bravo” Varian Gen II MBE (Status: operational)

• History: Donation from Bell Labs, installed 1994 and refurbished 2007
• Materials:
• Er – Veeco 10CC High temperature source
• Ga – Veeco 400g SUMO
• In – Veeco 400g SUMO
• Al – Veeco 200g SUMO
• N – SVTA rf plasma source
• As – Veeco 500CC valved-cracker
• Sb – Veeco 200CC valved-cracker
• P – Veeco 500CC valved-cracker
• Not currently installed
• Si – Veeco dopant source
• Be – Veeco dopant source
• Te – MBE Komponenten – Tilted crucible dopant source
• Not currently installed
• C – Custom gas source
• Ancillary Equipment:
• Staib 15 keV RHEED system
• KSA RHEED analysis
• Luxtron low-temperature pyrometer
• Stanford Research Systems RGA 300
• Veeco externally adjustable group-III shutters
• MBE Control’s AMBER growth software
• Veeco 3” substrate manipulator

“Echo” EPI MOD Gen II (Status: Under installation)

• History: Purchased in 1995 by NIST, donated to LASE in 2008
• Materials:
• Top secret!
• Ancillary Equipment:
• Top secret!

“Charlie” Custom Gen II (Status: Awaiting talented young minds)

• History: Terry Mattord designed, installed in 1994
• Materials:
• Top secret!
• Ancillary Equipment:
• Top secret!

Bakeout structure (BOS)

• Outgassing MBE components prior to introducing them to the MBE system
• Equipment:
• CTI cryo
• Stanford Research Systems RGA 200

Photoluminescence (PL) / Photoreflectance (PR)

• PL: Measuring luminescence efficiency, emission wavelength, and so on.
• PR: Measuring band alignments
• Ancillary equipment:
• LHe cryostat and controller

Edge-emitting laser (EEL) test setup

• CW, pulsed, and temperature-dependant EEL characterization

Cary UV/Visible spectrophotometer (Status: Under installation)

• Metal/semiconductor nanocomposite characterization

I-V measurement station

• Tunnel junction characterization
• Miscellaneous process flow diagnostics (e.g. TLM)

Other equipment available through Microelectronics Research Center (NNIN –funded)

• Processing: III-V and Si processing (litho, etch, metallization, etc), lapping/polishing, wire bonding, etc.
• Characterization: HR-XRD, AFM, TEM, Hall Effect, etc.