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The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs (jointly with Prof. Lee). Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique. |
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Recent Publications
(Invited) S.R. Bank, "Recent Advances in InAs Avalanche Photodiodes," 2013 IEEE Photonics Society Conference (IPC), Bellevue, WA, Sept. 2013.V.D. Dasika, E.M. Krivoy, H.P. Nair, S.J. Maddox, K.W. Park, D. Jung, M.L. Lee, E.T. Yu, and S.R. Bank, "InAs Quantum Dot Growth using Bismuth as a Surfactant for Optoelectronic Applications," submitted to Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, June 2013.E.M. Krivoy, A. Vasudev, H.P. Nair, V.D. Dasika, R. Synowicki, R. Salas, S.J. Maddox, M. Brongersma, and S.R. Bank, "Tunable, Epitaxial, Semimetallic Films for Plasmonics," submitted to Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, June 2013.A. Rundquist, A. Majumdar, M. Bajcsy, V.D. Dasika, S.R. Bank, and J. Vuckovic, "Photonic crystal coupled cavity arrays for quantum simulation," submitted to Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, June 2013.S.J. Maddox, K.M. Yu, A.J. Ptak, H.P. Nair, V.D. Dasika, and S.R. Bank, "Optical and Structural Characterization of InAsBi and InGaAsBi Grown by Molecular Beam Epitaxy," accepted to 55th Electronic Materials Conf. (EMC), South Bend, IN, June 2013.
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Seth R. Bank
Temple Foundation Fellow. No. 5
Associate Professor
Email:
CV: SRB_CV.pdf
Offices:
2.606C MER (main office)
312 ENS (teaching office)
Mailing address:
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758
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