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The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs (jointly with Prof. Lee). Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique. |
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Recent Publications
A.M. Crook, H.P. Nair, and S.R. Bank, "Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures," Appl. Phys. Lett., vol. 98 no. 12 p. 121108, (2011). A. Sciambi, M. Pelliccione, M.P. Lilly, S.R. Bank, A.C. Gossard, L.N. Pfeiffer, K.W. West, D. Goldhaber-Gordon, K. Deguchi, Y. Mizuguchi, and others, "Vertical Field-Effect Transistor Based on Wavefunction Extension," Phys. Rev. B, vol. 84 no. 8 p. 085301, (2011).
H.P. Nair, A.M. Crook, and S.R. Bank, "Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition," Appl. Phys. Lett., vol. 96 no. 22 p. 222104, (2010). |
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 Seth R. Bank CV: SRB_CV.pdf Offices: Mailing address: |