UTBanner

CPE Courses Header LASE The University of Texas at Austin Electrical & Computer Engineering Cockrell School of Engineering
MER The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs (jointly with Prof. Lee). Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique.
Equipment

Recent Publications

A.M. Crook, H.P. Nair, and S.R. Bank, "Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures," Appl. Phys. Lett., vol. 98 no. 12 p. 121108, (2011).

A. Sciambi, M. Pelliccione, M.P. Lilly, S.R. Bank, A.C. Gossard, L.N. Pfeiffer, K.W. West, D. Goldhaber-Gordon, K. Deguchi, Y. Mizuguchi, and others, "Vertical Field-Effect Transistor Based on Wavefunction Extension," Phys. Rev. B, vol. 84 no. 8 p. 085301, (2011).

H.P. Nair, A.M. Crook, and S.R. Bank, "Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition," Appl. Phys. Lett., vol. 96 no. 22 p. 222104, (2010).


View Larger Map
Seth Bank

Seth R. Bank
Assistant Professor
Phone: (512) 471-9669
Email:

CV: SRB_CV.pdf

Offices:
2.606C MER (main office)
312 ENS (teaching office)

Mailing address:
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758