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CPE Courses Header University of Texas at Austin Electrical & Computer Engineering Cockrell School of Engineering
Publications
Semiconductor/Metal Heterostructures and Nanocomposites
  1. U. Singisetti, A.M. Crook, E. Lind, M.A. Wistey, J.D. Zimmerman, A.C. Gossard, M.J.W. Rodwell, S.R. Bank, “Ultra-Low Resistance Ohmic Contacts to InGaAs/InP,” submitted to 65th Device Research Conf. (DRC).
  2. M. A. Wistey, U. Singisetti, G.J. Burek, A.C. Gossard, M.J.W. Rodwell, S.R. Bank, Y. Taur, P.M. Asbeck, A.C. Kummel, M.V. Fischetti, “High Mobility in Strongly Degenerate InGaAs/InP FET Channels,” submitted to 65th Device Research Conf. (DRC).
  3. H.T. Chen, W.J. Padilla, J.M.O. Zide, S.R. Bank, A.C. Gossard, A.J. Taylor, R.D. Averitt, “Ultrafast Optical Switching of Terahertz Metamaterials Fabricated on ErAs/GaAs Nanoisland Superlattices,” to appear in Optics Lett., 2007.
  4. S.R. Bank, U. Singisetti, A.M. Crook, J.D. Zimmerman, J.M.O. Zide, A.C. Gossard, M.J.W. Rodwell, “MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts,” 2006 North American Molecular Beam Epitaxy Conf. (NAMBE), September 2006, Durham, NC.
  5. M.P. Hanson, S.R. Bank, J.M.O. Zide, J.D. Zimmerman, A.C. Gossard, “Controlling the Electronic Properties of Epitaxial Nanocomposites of Dissimilar Materials,” submitted to J. Crystal Growth, 2006.
  6. (Plenary) M. Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S.R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, P. Rowell, “Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits,” 64th Device Research Conf. (DRC), June 2006, University Park, PA.
  7. (Plenary) A.C. Gossard, M.P. Hanson, J.M.O. Zide, J.D. Zimmerman, S.R. Bank, “Growth and Uses of Metal/Semiconductor Heterostructures,” 48th Electronic Materials Conf. (EMC), June 2006, University Park, PA.
Nanoscience and Physics
  1. W. Yi, V. Narayanamurti, J.M.O. Zide, S.R. Bank, A.C. Gossard “Ballistic Carrier Injection Induced Electroluminescence of InAs Quantum Dots in a Hot-Electron Metal-Base Transistor,” to be presented and the 2007American Physical Society (APS) March Meeting, March 2007, Denver, CO.
  2. A. Sciambi, K. Todd, D. Goldhaber-Gordon, S.R. Bank, A.C. Gossard “The Virtual Scanning Tunneling Microscope: A Novel Technique for Imaging Two-Dimensional Electron Systems,” to be presented and the 2007American Physical Society (APS) March Meeting, March 2007, Denver, CO.
Journal Publications - Dilute-Nitride Lasers and Materials (Ga,In)(N,As,Sb)
  1. S.R. Bank, H.B. Yuen, H.P. Bae, M.A. Wistey, A. Moto, J.S. Harris, “Enhanced Luminescence in GaInNAsSb Quantum Wells Through Variation of the Arsenic and Antimony Fluxes,” Appl. Phys. Lett., vol. 88, no. 24, p241923, June 2006.
  2. S.R. Bank, H.B. Yuen, H.P. Bae, M.A. Wistey, J.S. Harris, “Over-Annealing Effects in GaInNAs(Sb) Alloys and Their Importance to Laser Applications,” Appl. Phys. Lett., vol. 88, no. 22, p221115, May 2006.
  3. H.B. Yuen, S.R. Bank, H. Bae, M.A. Wistey, J.S. Harris, “Effects of Strain on the Optimal Annealing Temperature of GaInNAsSb Quantum Wells,” Appl. Phys. Lett., vol. 88, no. 22, p. 221913, May 2006.
  4. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H.B. Yuen, S.R. Bank, H. Bae, M.A. Wistey, J.S. Harris, “Band Gap Discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs Single Quantum Wells with 0≤x<0.6 Studied by Contactless Electroreflectance Spectroscopy,” Appl. Phys. Lett., vol. 88, no. 22, p. 221113, May 2006.
  5. H.B. Yuen, S.R. Bank, H.P. Bae, M.A. Wistey, J.S. Harris, “The Role of Antimony on Properties of Widely Varying GaInNAsSb Compositions,” J. Appl. Phys., vol. 99, no. 09, p. 093504, May 2006.
  6. M.A. Wistey, S.R. Bank, H.P. Bae, H.B. Yuen, E.R. Pickett, L.L. Goddard, J.S. Harris, “GaInNAsSb/GaAs Vertical Cavity Surface Emitting Lasers at 1534 nm,” Electron. Lett., vol. 42, no. 5, p. 282, March 2006.
  7. S.R. Bank, H.P. Bae, H.B. Yuen, M.A. Wistey, L.L. Goddard, J.S. Harris, “Room-Temperature Continuous- Wave 1.55-µm GaInNAsSb Laser on GaAs,” Electron. Lett., vol. 42, no. 3, p. 39, Feb. 2006.
  8. S.R. Bank, L.L. Goddard, M.A. Wistey, H.B. Yuen, J.S. Harris, “On the Temperature Sensitivity of 1.5 µm GaInNAsSb Lasers,” IEEE J. Select. Topics Quantum Electron., vol. 11, no. 5, p. 1089, Sept.-Oct. 2005.
  9. S.R. Bank, H.B. Yuen, M.A. Wistey, V. Lordi, H.P. Bae, J.S. Harris, “Effects of Growth Temperature on the Structural and Optical Properties of 1.55 µm GaInNAsSb Quantum Wells Grown on GaAs,” Appl. Phys. Lett., vol. 87, no. 2, p. 021908, June 2005.
  10. S.R. Bank, M.A. Wistey, H.B. Yuen, V. Lordi, V. F. Gambin, J.S. Harris, “Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs,” J. of Vac. Sci. Technol. B, vol. 23, no. 3, p. 1320, May/June 2005.
  11. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, H.P. Bae, J.S. Harris, “Molecular Beam Epitaxy Growth of Low-Threshold CW GaInNAsSb Lasers at 1.5 µm,” J. of Vac. Sci. Technol. B, vol. 23, no. 3, p. 1337, May/June 2005.
  12. H.B. Yuen, M.A. Wistey, S.R. Bank, H.P. Bae, J.S. Harris, “Effects of N2 Flow into a RF Plasma Cell on GaInNAs Grown by MBE,” J. of Vac. Sci. Technol. B, vol.23, no.3, p.1328, May/June 2005.
  13. M.A. Wistey, S.R. Bank, H.B. Yuen, T. Gugov, J.S. Harris, “Protecting Wafer Surface During GaInNAs Plasma Ignition by Use of an Arsenic Cap,” J. of Vac. Sci. Technol. B, vol.23, no.3, p.1324, May/June 2005.
  14. M.A. Wistey, S.R. Bank, H.B. Yuen, J.S. Harris, “Using Beam Flux Monitor as Langmuir Probe for Plasma- Assisted MBE,” J. of Vac. Sci. Technol. A, vol. 23, no. 3, p. 460, May/June 2005.
  15. M.A. Wistey, S.R. Bank, H.B. Yuen, H. Bae, J.S. Harris, “Nitrogen Plasma Optimization for High-Quality Dilute Nitrides,” J. Crys. Growth, vol. 278, no. 1-4, p. 229, May 2005.
  16. H.B. Yuen, M.J. Seong, R. Kudrawiec, S. Yoon, S.R. Bank, M.A. Wistey, J. Misciewicz, J.S. Harris, “Improved Optical Quality from GaNAsSb in the Dilute Sb Limit,” J. Appl. Phys., vol. 97, no. 11, p. 113510, May 2005.
  17. M.M. Oye, M. A. Wistey, J.M Reifsnider, S. Agarwal, T.J. Mattord, S. Govindaraju, G.A. Hallock, A.L. Holmes Jr., S.R. Bank, H.B. Yuen, J.S. Harris, “Ion Damage Effects From Negative Deflector Plate Voltages During the Plasma-Assisted Molecular Beam Epitaxy Growth of Dilute Nitrides,” Appl. Phys. Lett., vol. 86, no. 22, p. 221902, May 2005.
  18. L.L. Goddard, S.R. Bank, M.A. Wistey, H.B. Yuen, J.S. Harris, “High Performance GaInNAsSb/GaAs Lasers at 1.5µm,” Proc. SPIE, 5738, p. 180, April 2005.
  19. L.L. Goddard, S.R. Bank, M.A. Wistey, H.B. Yuen, Z. Rao, J.S. Harris, “Recombination, Gain, Band Structure, Efficiency, and Reliability of 1.5 µm GaInNAsSb/GaAs Lasers,” J. Appl. Phys., vol. 97, no. 8, p. 83101, April 2005.
  20. R. Kudrawiec, K. Ryczko, J. Misiewicz, H.B. Yuen, S.R. Bank, M.A. Wistey, H.P. Bae, J.S. Harris, “The Bandgap Discontinuity in GaN0.02As0.87Sb0.11/GaAs Single Quantum Wells Investigated by Photoreflectance Spectroscopy,” Appl. Phys. Lett,. vol. 86, no. 14, p. 141908, April 2005.
  21. V. Lordi, H.B. Yuen, S.R. Bank, M.A. Wistey, S. Friedrich, J.S. Harris, “Nearest-neighbor Distributions in GaInNAs and GaInNAsSb Thin Films Upon Annealing,” Phys. Rev. B, vol. 71, no. 12, p.125309, March 2005.
  22. R. Kudrawiec, K. Ryczko, J. Misiewicz, H.B. Yuen, S.R. Bank, M.A. Wistey, H.P. Bae, J.S. Harris, “Photoreflectance and Photoluminescence Investigations of a Step-Like GaInNAsSb/GaAsN/GaAs Quantum Well Tailored at 1.5 µm: the Energy Level Structure and the Stokes Shift,” J. Appl. Phys., vol. 97, no. 5, p. 053515, March 2005.
  23. R. Kudrawiec, P. Sitarek, J. Misiewicz, S.R. Bank, H.B. Yuen, M.A. Wistey, J.S. Harris, “Interference Effects in Electromodulation Spectroscopy Applied to GaAs-based Structures: A Comparison of Photoreflectance and Contactless Electroreflectance,” Appl. Phys. Lett., vol. 86, no. 9, p. 091115, Feb. 2005.
  24. H.B. Yuen, S.R. Bank, M.A. Wistey, A. Moto, J.S. Harris, “Comparison of GaNAsSb and GaNAs as Quantum Well Barriers for GaInNAsSb Optoelectronic Devices Operating at 1.3-1.55 µm,” J. Appl. Phys., vol. 96, no. 11, p. 6375, Dec. 2004.
  25. D. Gollub, M. Kamp, A. Forchel, J. Seufert, S.R. Bank, M.A. Wistey, L.L. Goddard, H.B.Yuen, J.S. Harris, “Continuous-Wave Operation of GaInNAsSb Distributed Feedback Lasers at 1.5 µm,” Electron. Lett., vol. 40, no. 23, p. 1487, Nov. 2004.
  26. J.S. Harris, S.R. Bank, M.A. Wistey, H.B. Yuen, “GaInNAs(Sb) Long Wavelength Communications Lasers,” IEE Proc., vol. 151, no. 1, p. 407, Oct. 2004.
  27. S.R. Bank, M.A. Wistey, L.L. Goddard, H.B.Yuen, J.S. Harris, “High Performance 1.5 µm GaInNAsSb Lasers on GaAs,” Electron. Lett., vol. 40, no. 19, p. 1186, Sept. 2004.
  28. V. Lordi, H.B. Yuen, S.R. Bank, J.S. Harris, “Quantum Confined Stark Effect of GaInNAs(Sb) Quantum Wells at 1300-1600 nm,” Appl. Phys. Lett., vol. 85, no. 6, p. 902, Aug. 2004.
  29. S.R. Bank, M.A. Wistey, L.L. Goddard, H.B. Yuen, V. Lordi, J.S. Harris, “Low-Threshold, Continuous- Wave, 1.5-µm GaInNAsSb Lasers Grown on GaAs,” J. Quantum Electron., vol. 40, no. 6, p. 656, June 2004.
  30. M.A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, J.S. Harris, “GaInNAs(Sb) Vertical-Cavity Surface- Emitting Lasers at 1.460 µm,” J. Vacuum Sci. Tech. B, vol. 22, no. 3, p.1562, May 2004.
  31. J.X. Fu, S.R. Bank, M.A. Wistey, H.B. Yuen, J.S. Harris, “Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2.04 µm,” J. Vacuum Sci. Technol. B, vol. 22, no. 3, p.1463, May 2004.
  32. T. Gugov, V. Gambin, M. Wistey, H. Yuen, S. Bank, J.S. Harris, “Use of Transmission Electron Microscopy in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by Molecular Beam Epitaxy,” J. Vacuum Sci. Tech. B, vol. 22, no. 3, p.1588, May 2004.
  33. M.A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, J.S. Harris, “Monolithic, GaInNAsSb VCSELs at 1460nm on GaAs by MBE,” Electron. Lett., vol. 39, no. 25, p. 1822, Dec. 2003.
  34. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, J.S. Harris, “A Low Threshold CW GaInNAsSb/GaAs Laser at 1.49 µm,” Electron. Lett., vol. 39, no. 20, p. 1445, Oct. 2003.
  35. K. Volz, V. Gambin, W. Ha, M.A. Wistey, H.B. Yuen, S.R. Bank, J.S. Harris, “The Role of Sb in the MBE growth of (GaIn)(NAsSb),” J. Crys. Growth, vol. 251, no. 1-4, p. 360, April 2003.
  36. S.R. Bank, W. Ha, V. Gambin, M.A. Wistey, H.B. Yuen, L.L. Goddard, S. Kim, J.S. Harris, “1.5 µm GaInNAs(Sb) Lasers Grown on GaAs by MBE,” J. Crys. Growth, vol. 251, no. 1-4, p. 367, April 2003.
  37. W. Ha, V. Gambin, M. Wistey, S. Bank, H. Yuen, S. Kim, J. Harris, “Long Wavelength GaInNAs(Sb) Lasers on GaAs,” J. Quantum Electron., vol. 38, no. 9, p. 1260, Sept. 2002.
  38. V. Gambin, W. Ha, M. Wistey, S. Bank, H. Yuen, S. Kim, J. Harris, “GaInNAsSb for 1.3-1.6 µm Long- Wavelength Lasers Grown by Molecular Beam Epitaxy,” J. Select. Topics Quantum Electron., vol. 8, no. 4, p. 795, July 2002.
  39. W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim, J. Harris, “Multiple Quantum Well GaInNAs/GaNAs Ridge- Waveguide Laser Diodes Operating Out to 1.4 µm,” IEEE Photon. Technol. Lett., vol. 14, no. 5, p. 591, May 2002.
  40. W. Ha, V. Gambin, M. Wistey, S. Bank, H. Yuen, S. Kim, J. Harris, “Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers,” Electron. Lett., vol. 38, no. 6, p. 277, March 2002.
Conference Presentations - Dilute-Nitride Lasers and Materials (Ga,In)(N,As,Sb)
  1. (Invited) S.R. Bank, “Towards High Power 1.55-µm GaInNAsSb GaAs-Based Lasers on GaAs,” IEEE/LEOS Semiconductor Laser Workshop, May 2007, Baltimore, MD.
  2. Y. Lin, L.F. Lester, S.R. Bank, H.P. Bae, H.B. Yuen, M.A. Wistey, J.S. Harris, “ Monolithic 1.55-µm GaInNAsSb Quantum Well Mode-Locked Lasers,” 2007 Conf. on Lasers and Electro Optics (CLEO), May 2007, Baltimore, MD.
  3. (Invited) S.R. Bank, “Low-threshold 1.55-µm GaInNAsSb lasers on GaAs,” Rank Prize Funds Symposium, June 2006, Windermere, UK.
  4. S.R. Bank, H.P. Bae, L.L. Goddard, H.B. Yuen, M.A. Wistey, J.S. Harris, “Very Low-Threshold 1.55-µm Dilute-Nitride Lasers,” 64th Device Research Conf. (DRC), June 2006, University Park, PA.
  5. S.R. Bank, H.P. Bae, H.B. Yuen, E.R. Pickett, M.A. Wistey, J.S. Harris, “Strong Luminescence Enhancement in GaInNAsSb Quantum Wells Through Variation of the Group-V Fluxes,” 48th Electron. Mat. Conf. (EMC), June 2006, University Park, PA.
  6. E.R. Pickett, S.R. Bank, H.B. Yuen, H.P. Bae, J.S. Harris, “TEM Analysis of Growth and Annealing Temperature Effects on GaInNAsSb Quantum Wells,” 48th Electron. Mat. Conf. (EMC), June 2006, University Park, PA.
  7. H.P. Bae, S.R. Bank, H.B. Yuen, E.R. Pickett, M.A. Wistey, J.S. Harris, “Analysis of Relative Speed and Temperature Dependence of Constituent Processes in the Annealing of GaInNAs(Sb),” 48th Electron. Mat. Conf. (EMC), June 2006, University Park, PA.
  8. S.R. Bank, H.P. Bae, H.B. Yuen, M.A. Wistey, L.L. Goddard, J.S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, “Low-Threshold Continuous-Wave 1.55-µm GaInNAsSb lasers,” 2006 Conf. on Lasers and Electro Optics (CLEO), May 2006, Long Beach, CA.
  9. S.R. Bank, H.P. Bae, H.B. Yuen, L.L. Goddard, M.A. Wistey, T. Sarmiento, J.S. Harris, “Low-Threshold CW 1.55-µm GaAs-Based Lasers,” 2006 Optical Fiber Communication Conf. (OFC), March 2006, Anaheim, CA.
  10. S.R. Bank, H.B. Yuen, H.P. Bae, M.A. Wistey, J.S. Harris, “MBE Growth of High-Efficiency GaInNAsSb Quantum Wells from 1.45 – 1.55 µm,” 2005 North American Molecular Beam Epitaxy Conf. (NAMBE), Oct. 2005, Santa Barbara, CA.
  11. S.R. Bank, H.B Yuen, M.A. Wistey, V. Lordi, H.P Bae, J.S. Harris, “Effects of Growth Temperature on the Optical Behavior of GaInNAsSb Alloys,” 47th Electron. Mat. Conf. (EMC), June 2005, Santa Barbara, CA.
  12. S.R. Bank, M.A. Wistey, L.L. Goddard, H.B. Yuen, H.P. Bae, J.S. Harris, “1.55 µm GaInNAsSb Lasers on GaAs,” 2005 Conf. on Lasers and Electro-Optics (CLEO), May 2005, Baltimore, MD.
  13. L.L. Goddard, S.R. Bank, M.A. Wistey, H.B. Yuen, H.P. Bae, J.S. Harris, “Differential Gain and Non-linear Gain Compression of GaInNAsSb/GaAs Lasers at 1.5 µm,” 2005 Conf. on Lasers and Electro-Optics (CLEO), May 2005, Baltimore, MD.
  14. S.R. Bank, M.A. Wistey, H.B. Yuen, H.P. Bae, L.L. Goddard, J.S. Harris, “Defect Modification in GaInNAsSb Growth with Insertion of GaAs Prelayers,” Spring 2005 Materials Research Symposium (MRS), April 2005, San Francisco, CA.
  15. L.L. Goddard, S.R. Bank, M.A. Wistey, H.B. Yuen, J.S. Harris, “High performance GaInNAsSb/GaAs lasers at 1.5µm,” Invited Talk, 2005 Photonics West, Jan. 2005, San Jose, CA.
  16. H.B. Yuen, M.J. Seong, S. Yoon, R. Kudrawiec, S.R. Bank, M.A. Wistey, J. Misciewicz, A. Mascarenhas, J.S. Harris, “Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit,” Fall 2004 Materials Research Symposium (MRS), Dec. 2004, Boston, MA.
  17. S.R. Bank, M.A. Wistey, H.B. Yuen, V. Lordi, V. F. Gambin, J.S. Harris, “Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs,” 2004 North American Molecular Beam Epitaxy Conf. (NAMBE), Oct. 2004, Banff, Canada.
  18. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, H.P. Bae, J.S. Harris, “MBE Growth of Low-Threshold CW GaInNAsSb Lasers at 1.5 µm,” 2004 North American Molecular Beam Epitaxy Conf. (NAMBE), Oct. 2004, Banff, Canada.
  19. H.B. Yuen, M.A. Wistey, S.R. Bank, H.P. Bae, J.S. Harris, “Effects of N2 Flow into a RF Plasma Cell on GaInNAs Grown by MBE,” 2004 North American MBE Conf. (NAMBE), Oct. 2004, Banff, Canada.
  20. M.A. Wistey, S.R. Bank, H.B. Yuen, T. Gugov, J.S. Harris, “Protecting Wafer Surface During GaInNAs Plasma Ignition by Use of an Arsenic Cap,” 2004 North American MBE Conf. (NAMBE), Banff, Canada, Oct. 2004.
  21. M.A. Wistey, S.R. Bank, H.B. Yuen, H. Bae, J.S. Harris, “Nitrogen Plasma Optimization for High Quality Dilute Nitrides,” 2004 International Conf. on Molecular Beam Epitaxy (MBE), Aug. 2004, Edinburgh, Scotland.
  22. S.R. Bank, M.A. Wistey, L.L. Goddard, H.B. Yuen, J.S. Harris, “The Role and Suppression of Carrier Leakage in 1.5 µm GaInNAsSb/GaAs Lasers,” 62nd Device Research Conf. (DRC), June 2004, Notre Dame, IN.
  23. S.R. Bank, V. Lordi, M.A. Wistey, H.B Yuen, J.S. Harris, “Temperature Dependent Behavior of GaInNAs(Sb) Alloys Grown on GaAs,” 46th Electron. Mat. Conf. (EMC), June 2004, Notre Dame, IN.
  24. M.A. Wistey, S.R. Bank, H.B. Yuen, V.F. Gambin, J.S. Harris, “Low-Voltage Deflection Plates Reduce Plasma Damage in MBE Dilute Nitride Growth,” 46th Electron. Mat. Conf. (EMC), June 2004, Notre Dame, IN.
  25. V. Lordi, S.R. Bank, H.B. Yuen, M.A. Wistey, J.S. Harris, “Electroabsorption and Band Edge Optical Properties of GaInNAsSb Quantum Wells Around 1550nm,” 46th Electron. Mat. Conf. (EMC), June 2004, Notre Dame, IN.
  26. T. Gugov, V. Gambin, M. Wistey, H. Yuen, S. Bank, J.S. Harris, “TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy,” 46th Electron. Mat. Conf. (EMC), June 2004, Notre Dame, IN.
  27. S.R. Bank, L.L. Goddard, M.A. Wistey, H.B. Yuen, J.S. Harris, “The Temperature Sensitivity of 1.5 µm GaInNAsSb Lasers on GaAs,” 2004 Conf. on Lasers and Electro-Optics (CLEO), May 2004, San Francisco, CA.
  28. M.A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, J.S. Harris, “GaInNAsSb/GaNAs VCSELs at 1.46µm,” 2004 Conf. on Lasers and Electro-Optics (CLEO), May 2004, San Francisco, CA.
  29. V. Lordi, H.B. Yuen, S.R. Bank, M.A. Wistey, J.S. Harris, “Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm,” 2004 Conf. on Lasers and Electro-Optics (CLEO), May 2004, San Francisco, CA.
  30. L.L. Goddard, S.R. Bank, M.A. Wistey, H.B. Yuen, J.S. Harris, “Measurements of Intrinsic Properties of High Power CW Single Quantum Well GaInNAsSb/GaAs Lasers at 1.5µm,” 2004 Conf. on Lasers and Electro-Optics (CLEO), May 2004, San Francisco, CA.
  31. H.B. Yuen, S.R. Bank, M.A. Wistey, H. Bae, J.S. Harris, A. Moto, “Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE,” Spring 2004 Materials Research Symposium (MRS), April 2004, San Francisco, CA.
  32. V. Lordi, H.B. Yuen, S.R. Bank, M.A. Wistey, J.S. Harris, “Electroabsorption Properties of GaInNAs(Sb) Quantum Wells at 1300-1600nm,” Spring 2004 Materials Research Symposium (MRS), April 2004, San Francisco, CA.
  33. T. Gugov, M. Wistey, H. Yuen, S. Bank, J.S. Harris, “Structural Characterization of Molecular Beam Epitaxy Grown GaInNAs and GaInNAsSb Quantum Wells by Transmission Electron Microscopy,” Spring 2004 Materials Research Symposium (MRS), April 2004, San Francisco, CA.
  34. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, J.S. Harris, “Progress Towards High Power 1.5 µm GaInNAsSb/GaAs Lasers for Raman Amplifiers,” 2004 Optical Fiber Communication Conf. (OFC), Feb. 2004, Los Angeles, CA.
  35. H.B. Yuen, V. Lordi, S.R. Bank, M.A. Wistey, J.S. Harris, A. Moto, “Analysis of Material Properties of GaNAs(Sb) Grown by MBE,” Fall 2003 Materials Research Symposium (MRS), Dec. 2003, Boston, MA.
  36. J.X. Fu, S.R. Bank, M.A. Wistey, H.B. Yuen, J.S. Harris, “Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2.04 µm,” 2003 North American MBE Conf. (NAMBE), Oct. 2003, Keystone, CO.
  37. M.A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, J.S. Harris, “Real-Time Ion Count from Nitrogen Plasma Source,” 2003 North American MBE Conf. (NAMBE), Oct. 2003, Keystone, CO.
  38. T. Gugov, V. Gambin, M. Wistey, H. Yuen, S. Bank, J.S. Harris, “Use of Transmission Electron Microscopy in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by Molecular Beam Epitaxy,” 2003 North American MBE Conf. (NAMBE), Oct. 2003, Keystone, CO.
  39. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, J.S. Harris, “Low Threshold, CW, Room Temperature 1.49 µm GaAs-Based Lasers,” International Symposium on Compound Semiconductors (ISCS), Aug. 2003, San Diego, CA.
  40. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, J.S. Harris, “Low Threshold, CW, Room Temperature 1.49 µm GaAs-Based Lasers,” 61st Device Research Conf. (DRC) Late News, June 2003, Salt Lake City, UT.
  41. S.R. Bank, H.B. Yuen, W. Ha, V.F. Gambin, M.A. Wistey, J.S. Harris, “Strong Photoluminescence Enhancement of 1.3 µm GaInNAs Active Layers by Introduction of Antimony,” 45th Electron. Mat. Conf. (EMC), June 2003, Salt Lake City, UT.
  42. H.B. Yuen, S.R. Bank, M.A. Wistey, A. Moto, J.S. Harris, “An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1.3 and 1.55 µm,” Electron. Mat. Conf. (EMC), June 2003, Salt Lake City, UT.
  43. W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim, J.S. Harris, “A 1.5 µm GaInNAs(Sb) Laser Grown on GaAs by MBE,” Proc. 18th IEEE International Semiconductor Laser Conf. (ISLC), Sept. 2002, Garmisch, Germany.
  44. W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, L. Goddard, S. Kim, J.S. Harris, “A 1.5 µm GaInNAs(Sb) Laser Grown on GaAs by MBE,” 2002 International Conf. on Molecular Beam Epitaxy, Sept. 2002, San Francisco, CA.
  45. V. Gambin, V. Lordi, W. Ha, M. Wistey, K. Volz, S. Bank, H. Yuen, J. Harris, “High Intensity 1.3 – 1.6 µm Luminescence and Structural Changes on Anneal from MBE Grown (Ga,In)(N,As,Sb),” 2002 International Conf. on Molecular Beam Epitaxy, Sept. 2002, San Francisco, CA.
  46. W. Ha, V. Gambin, S. Bank, M. Wistey, S. Kim, J.S. Harris, “A 1.5 µm GaInNAs(Sb) Laser Grown on GaAs by MBE,” 60th Device Research Conf. (DRC), June 2002, Santa Barbara, CA.
  47. V. Gambin, W. Ha, M. Wistey, S. Bank, H. Yuen, S. Kim, J. Harris, “Long Wavelength, High Efficiency Photoluminescence from MBE Grown GaInNAsSb,” 44th Electron. Mat. Conf. (EMC), June 2002, Santa Barbara, CA.
  48. W. Ha, V. Gambin, S. Bank, M. Wistey, S. Kim, J.S. Harris, “Long Wavelength GaInNAs(Sb) Lasers on GaAs,” Proc. 22nd Conf. on Lasers and Electro-Optics (CLEO), May 2002, Long Beach, CA.
  49. W. Ha, V. Gambin, S. Bank, M. Wistey, S. Kim, J.S. Harris, “Long Wavelength GaInNAs(Sb) Lasers on GaAs,” Proc. 14th International Conf. on Indium-Phosphide and Related Materials (IPRM), May 2002, Stockholm, Sweden.
  50. V. Gambin, W. Ha, M. Wistey, S. Bank, H. Yuen, S. Kim, J. Harris, “High Intensity 1.3 – 1.6 µm Luminescence from MBE Grown GaInNAsSb”, Spring 2002 Materials Research Symposium (MRS), April, 2002, San Francisco, CA.
  51. V. Lordi, V. Gambin, W. Ha, S. Bank, J. Harris, “Examination of N Incorporation into GaInNAs,” Spring 2002 Materials Research Symposium (MRS), April, 2002, San Francisco, CA.
  52. W. Ha, V. Gambin, S. Bank, M. Wistey, S. Kim, J.S. Harris, “High Efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Diode Lasers,” 2002 Photonics West, Jan. 2002, San Jose, CA.
  53. V. Gambin, W. Ha, M. Wistey, S. Bank, H. Yuen, S. Kim, J. Harris, “Material Properties for Long Wavelength Opto-Electronic Devices,” Fall 2001 Materials Research Symposium (MRS), Nov. 2001, Boston, MA.
Spin Injection into Semiconductors
  1. G. Salis, R. Wang, X. Jiang, R.M. Shelby, S.R. Bank, J.S. Harris, S.S.P. Parkin, “Temperature Independence of the Spin Injection Efficiency of a MgO-based Tunnel Spin Injector,” to be published in Appl. Phys. Lett.
  2. X. Jiang, R. Wang, R.M. Shelby, R.M. MacFarlane, S.R. Bank, J.S. Harris, S.S.P. Parkin, “Highly Spin Polarized Room Temperature Tunnel Injector for Semiconductor Spintronics using MgO (100),” Phys. Rev. Lett. vol. 94, no. 5, 056601, Feb. 2005.
  3. R. Wang, X. Jiang, R.M. Shelby, R.M. MacFarlane, S.R. Bank, J.S. Harris, S.S.P. Parkin, “Increase in Spin Injection Efficiency of a CoFe/MgO (100) Tunnel Spin Injector with Thermal Annealing,” Appl. Phys. Lett., vol. 86, no. 5, 052910, Jan. 2005.
  4. R. Wang, X. Jiang, R.M. Shelby, R.M. Macfarlane, S.R. Bank, J.S. Harris, S.S.P. Parkin, “Spin injection from ferromagnetic tunnel injectors in quantum well structures at high temperatures,” APS March Meeting, March 2004, Montreal, QC, Canada.
Silicon-Based Light Emission
  1. D.S. Gardner, S.R. Bank, L. Goddard, P. Griffin, J.S. Harris, R. Swanson, J.R. Patel, “On the Luminescence Efficiency of Silicon Diodes,” Proc. Spring Mat. Res. Soc., April 2003, San Francisco, CA.
  2. D.S. Gardner, F. Paillet, T. Karnik, R. Swanson, S.R. Bank, X. Liu, P. Griffin, J.R. Patel, J.S. Harris, “Silicon-Based Light Emitting Devices,” plenary talk at The AVS International Conf. on Microelectronics and Interfaces, March 2003, Santa Clara, CA.
  3. D.S. Gardner, S.R. Bank, P. Griffin, J.S. Harris, R. Swanson, J.R. Patel, “On the Luminescence Efficiency of Silicon Diodes,” Optical Amplification and Stimulation in Silicon (OASIS), Sept. 2002, Trento, Italy.
Heterojunction Bipolar Transistors
  1. T. Chung, S.R. Bank, J. Epple, K.C. Hsieh, “Current Gain Dependence on Subcollector and Etch-Stop Doping in InGaP/GaAs HBTs,” IEEE Trans. Electron. Dev., vol. 48, no. 5, p. 835-839, May 2001.
  2. T. Chung, S. Bank, K.C. Hsieh, “High DC Current Gain InGaP/GaAs HBTs Grown by LP-MOCVD,” Electron. Lett., vol. 36, no. 22, p. 1885-1886. Oct. 2000.