Publications

Displaying 4 publications
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Journal Article

  1. T. Dey, A. W. Arbogast, Q. Meng, M. Shamim. Reza, A. J. Muhowski, J. J. P. Cooper, E. Ozdemir, F. U. Naab, T. Borrely, J. Anderson, R. S. Goldman, D. Wasserman, S. R. Bank, M. W. Holtz, E. L. Piner, and M. A. Wistey, "Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy," Journal of Applied Physics, vol. 134, no. 19, Nov 2023. Digital object identifier
  2. B. Guo, S. Z. Ahmed, X. Xue, A. K. Rockwell, J. Ha, S. Lee, B. Liang, A. H. Jones, J. A. McArthur, S. H. Kodati, T. J. Ronningen, S. Krishna, J. Kim, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes," Journal of Lightwave Technology, Jun 2022. Digital object identifier
  3. E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, J. Kim, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films," Nano Letters, vol. 16, no. 11, pp. 6931-6938, Oct 2016. Digital object identifier
  4. M. M. Oye, M. A. Wistey, J. M. Reifsnider, S. Agarwal, T. J. Mattord, S. Govindaraju, G. A. Hallock, A. L. Holmes Jr., S. R. Bank, H. B. Yuen, and J. S. Harris, "Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides," APL, vol. 86, no. 22, pp. 221902, May 2005. Digital object identifier