|| The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs (jointly with Prof. Lee). Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique.
H.P. Nair, R. Salas, N.T. Sheehan, S.J. Maddox, A.M. Crook, and S.R. Bank, "3.4 µm GaSb-Based Type-I Diode Laser with an Aluminum-Free Active Region," submitted to Appl. Phys. Lett., Oct. 2013.
P. Jadaun, H.P. Nair, V. Lordi, S.R. Bank, and S.K. Banerjee, "Electronic and optical properties of GaSb:N from first principles," submitted to Physical Review Letters, Aug. 2013.
S.J. Maddox, A.P. Vasudev, V.D. Dasika, M.L. Brongersma, and S.R. Bank, "Exploring the Limits of Silicon Doping in InAs for Mid-Infrared Plasmonics," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct. 2013.
(Invited) S.R. Bank, "Recent Advances in InAs Avalanche Photodiodes," 2013 IEEE Photonics Society Conference (IPC), Bellevue, WA, Sept. 2013.
(Invited) S.R. Bank, E.M. Krivoy, and S.J. Maddox, "Growth of epitaxial doped semiconductor and semimetallic plasmonic materials," SPIE Optics and Photonics Meeting, San Diego, Ca, Aug. 2013.
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Seth R. Bank
Temple Foundation Fellow. No. 5
2.606C MER (main office)
312 ENS (teaching office)
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758