
The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based electronics/optoelectronics, and sources/detectors for quantum information processing. Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique.
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Seth R. Bank
Cockrell Family Chair in Engineering
Chandra Electrical & Computer Engineering
Email: sbank_at_ece.utexas.edu
CV: SRB_CV.pdf
Scholar: Profile
Offices:
2.206P MER (main office)
3.876 EER (teaching office)
Mailing address:
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758