Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm
| Author | |
|---|---|
| Year Published |
2004
|
| Journal |
J. Vac. Sci. Technol. B
|
| Volume |
22
|
| Number of Pages |
1463-1467
|
| Month Published |
05
|
| URL |
http://dx.doi.org/10.1116/1.1691411
|
| Download citation |