Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition
| Author | |
|---|---|
| Year Published |
2009
|
| Journal |
APL
|
| Volume |
94
|
| Number of Pages |
031903
|
| Month Published |
01
|
| URL |
http://dx.doi.org/10.1063/1.3073718
|
| Download citation |