Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%
| Author | |
|---|---|
| Year Published |
2007
|
| Journal |
J. of Appl. Phys.
|
| Volume |
101
|
| Number of Pages |
013504
|
| Month Published |
01
|
| URL |
http://dx.doi.org/10.1063/1.2382721
|
| DOI |
10.1063/1.2382721
|
| Download citation |