GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization
| Author | |
|---|---|
| Year Published |
2007
|
| Journal |
APL
|
| Volume |
91
|
| Number of Pages |
193503
|
| Month Published |
09
|
| URL |
http://dx.doi.org/10.1063/1.2806190
|
| Download citation |