Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm
| Author | |
|---|---|
| Year Published |
2004
|
| Journal |
J. Appl. Phys.
|
| Volume |
96
|
| Number of Pages |
6375-6381
|
| URL |
http://dx.doi.org/10.1063/1.1807028
|
| DOI |
10.1063/1.1807028
|
| Download citation |