Publications

Displaying 13 publications
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Journal Article

  1. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL Materials, vol. 5, no. 9, pp. 096106, Sep 2017. Digital object identifier
  2. R. Salas, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 108, no. 18, pp. 182102, May 2016. Digital object identifier
  3. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, and S. R. Bank, "Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 106, no. 8, pp. 081103, Feb 2015. Digital object identifier

Conference Paper

  1. B. D. Aguilar, A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Effects of Molecular Beam Epitaxy Selective Area Growth Techniques on III-V Optical Quality," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. E. S. Walker, W. Li, S. Guchhait, M. N. Yogeesh, F. He, Y. Wang, D. Akinwande, and S. R. Bank, "In Situ Oxidation of Bismuth Thin Films Grown by Molecular Beam Epitaxy for Device Applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  4. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  5. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, M. L. Lee, and S. R. Bank, "Surfactant-Mediated Growth of RE-As:InGaAs Nanocomposites," International Molecular Beam Epitaxy Conf. (IMBE), Flagstaff, AZ, Sep 2014.
  6. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. J. Ironside, E. M. Krivoy, S. J. Maddox, D. Jung, M. L. Lee, and S. R. Bank, "Properties of RE-As:InGaAs Nanocomposites," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  7. R. Salas, S. Guchhait, H. P. Nair, E. M. Krivoy, S. J. Maddox, and S. R. Bank, "Carrier Dynamics and Electrical Properties of LuAs:InGaAs Superlattices," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
  8. D. S. Gardner, S. R. Bank, L. L. Goddard, P. Griffin, J. S. Harris, R. Swanson, and J. R. Patel, "On the Luminescence Efficiency of Silicon Diodes," Materials Research Society (MRS) Spring Meeting, San Francisco, CA, Apr 2003.
  9. (Plenary) D. S. Gardner, F. Paillet, T. Karnik, R. Swanson, S. R. Bank, X. Liu, P. Griffin, J. R. Patel, and J. S. Harris, "Silicon-Based Light Emitting Devices," The AVS International Conf. on Microelectronics and Interfaces, Santa Clara, CA, Mar 2003.
  10. D. S. Gardner, S. R. Bank, P. Griffin, J. S. Harris, R. Swanson, and J. R. Patel, "On the Luminescence Efficiency of Silicon Diodes," Optical Amplification and Stimulation in Silicon (OASIS), Trento, Italy, Sep 2002.