Publications

Displaying 5 publications
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Journal Article

  1. C. S. Schulze, X. Huang, C. Prohl, V. Fullert, S. Rybank, S. J. Maddox, S. D. March, S. R. Bank, M. L. Lee, and A. Lenz, "Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate," APL, vol. 108, no. 14, pp. 143101, Apr 2016. Digital object identifier

Conference Paper

  1. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. B. D. Aguilar, A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Effects of Molecular Beam Epitaxy Selective Area Growth Techniques on III-V Optical Quality," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. R. C. White, M. K. Bergthold, A. J. Muhowski, Y. Wang, I. Okoro, D. Wasserman, and S. R. Bank, "Lattice-Matched InAsSbBi Photodetectors for Long-Wave Infrared Sensing," 81st Device Research Conf. (DRC), Santa Barbara, CA, Jun 2023.
  4. R. C. White, M. K. Bergthold, I. Okoro, Y. Wang, L. J. Nordin, A. J. Muhowski, A. F. Ricks, D. Wasserman, and S. R. Bank, "Towards Lattice-Matched Narrow Bandgap InAsSbBi Photodetectors," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.