Publications

Displaying 18 publications
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Journal Article

  1. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  2. J. Kopaczek, F. Dybala, S. J. Zelewski, N. Sokolowski, W. Zuraw, K. M. McNicholas, R. H. El-Jaroudi, R. C. White, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP," Journal of Physics D: Applied Physics, vol. 55, no. 1, pp. 015107, Oct 2021. Digital object identifier
  3. R. Kudrawiec, M. Polak, K. M. McNicholas, J. Kopaczek, M. A. Wistey, and S. R. Bank, "Bowing of the band gap and spin-orbit splitting energy in BGaAs," Materials Research Express, vol. 6, no. 12, pp. 125913, Jan 2020. Digital object identifier
  4. G. J. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Height-selective etching for regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1984-1987, Mar 2009. Digital object identifier
  5. U. Singisetti, J. D. Zimmerman, M. A. Wistey, J. Cagnon, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, S. Stemmer, and S. R. Bank, "ErAs epitaxial Ohmic contacts to InGaAs/InP," APL, vol. 94, no. 8, pp. 083505-083505, Feb 2009. Digital object identifier
  6. U. Singisetti, M. A. Wistey, J. D. Zimmerman, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, and S. R. Bank, "Ultralow resistance in situ Ohmic contacts to InGaAs/InP," APL, vol. 93, no. 18, pp. 183502, Nov 2008. Digital object identifier

Conference Paper

  1. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. B. D. Aguilar, A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Effects of Molecular Beam Epitaxy Selective Area Growth Techniques on III-V Optical Quality," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, J. Kopaczek, R. Kudrawiec, and S. R. Bank, "BGaInAs/GaAs quantum wells for 1. 3µm lasers," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  4. K. M. McNicholas, R. H. El-Jaroudi, J. Kopaczek, A. H. Jones, D. J. Ironside, R. Judrawiec, J. C. Campbell, and S. R. Bank, "Progress towards B-III-V optoelectronic devices on silicon," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  5. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  6. M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, J. Cagnon, S. Stemmer, S. R. Bank, Y. Sun, E. J. Kiewra, D. K. Sadana, A. C. Gossard, and M. J. Rodwell, "Self-aligned III-V MOSFETs for sub-22nm Nodes," SRC Techcon, Austin, TX, Aug 2008.
  7. M. A. Wistey, G. J. Burek, U. Singisetti, A. M. Crook, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs," International Conf. on Molecular Beam Epitaxy (MBE), Vancouver, BC, Canada, Aug 2008.
  8. M. J. Rodwell, E. Lind, Z. Griffith, A. M. Crook, S. R. Bank, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "On the Feasibility of few-THz Bipolar Transistors," Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM 07. IEEE, pp. 17-21, Sep 2007. Digital object identifier
  9. U. Singisetti, A. M. Crook, E. Lind, M. A. Wistey, J. D. Zimmerman, A. C. Gossard, M. J. Rodwell, and S. R. Bank, "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP," 65th Device Research Conf. (DRC), South Bend, IN, Jun 2007.
  10. (Plenary) M. J. Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "Frequency limits of InP-based integrated circuits," 19th International Conf. on Indium-Phosphide and Related Materials (IPRM), Matsue, Japan, pp. 9-13, May 2007. Digital object identifier
  11. S. R. Bank, U. Singisetti, A. M. Crook, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and M. J. Rodwell, "MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts," North American Molecular Beam Epitaxy Conf. (NAMBE), Sep 2006.
  12. (Plenary) M. J. Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S. R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, and P. Rowell, "Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits," 64th Device Research Conf. (DRC), State College, PA, Jun 2006.