Publications
Journal Article
- D. Wei, B. Gao, A. A. Dadey, J. A. McArthur, J. Bai, S. R. Bank, and J. C. Campbell, "Broadband Quantum Efficiency Enhancement of AlInAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces," Adv. Phot. Res., Jun 2024.
- D. Wei, A. A. Dadey, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Enhancing Extended SWIR AlInAsSb PIN Photodetectors with All-Dielectric Amorphous Germanium Photon-Capturing Gratings," ACS Photonics, Jan 2024.
- J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, R. Salas, J. C. Campbell, and S. R. Bank, "Demonstration of the AlInAsSb Cascaded Multiplier Avalanche Photodiode," Applied Physics Letters, vol. 123, no. 4, pp. 041106, Jul 2023.
- D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023.
- A. A. Dadey, J. A. McArthur, A. H. Jones, S. R. Bank, and J. C. Campbell, "Considerations for excess noise measurements of low-k-factor Sb-based avalanche photodiodes," Journal of the Optical Society of America A, May 2023.
- A. A. Dadey, J. A. McArthur, A. Kamboj, S. R. Bank, D. Wasserman, and J. C. Campbell, "High-gain low-excess-noise MWIR detection with a 3. 5-µm cutoff AlInAsSbbased separate absorption, charge, and multiplication avalanche photodiode," APL Photonics, vol. 101, no. 24, pp. 036101, Mar 2023.
- D. Chen, K. Sun, Y. Chen, A. H. Jones, A. A. Dadey, B. Guo, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model," Optics Express, vol. 30, no. 14, pp. 25262, Jul 2022.
- A. A. Dadey, A. H. Jones, J. A. McArthur, E. Y. Wang, A. J. Muhowski, S. R. Bank, and J. C. Campbell, "Narrow bandgap Al0. 15 In0. 85As0. 77Sb0. 23 for mid-infrared photodetectors," Optics Express, vol. 30, no. 15, pp. 27285-27292, Jul 2022.
- B. Guo, S. Z. Ahmed, X. Xue, A. K. Rockwell, J. Ha, S. Lee, B. Liang, A. H. Jones, J. A. McArthur, S. H. Kodati, T. J. Ronningen, S. Krishna, J. Kim, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes," Journal of Lightwave Technology, Jun 2022.
- N. D. Foster, A. K. Rockwell, J. A. McArthur, B. S. Mendoza, S. R. Bank, and M. C. Downer, "A Study of Second-Order Susceptibility in Digital Alloy-Grown InAs/AlSb Multiple Quantum Wells," Advanced Optical Materials, vol. 10, no. 2192845, May 2022.
- R. Wang, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Infrared Al0. 15InAsSb digital alloy NBn photodetectors," Journal of Lightwave Technology, vol. 40, no. 12, pp. 3855, Feb 2022.
- A. H. Jones, Y. Shen, K. Sun, D. Chen, S. D. March, S. R. Bank, and J. C. Campbell, "Room-temperature bandwidth of 2-\µm AlInAsSb avalanche photodiodes," Optics Express, vol. 29, no. 23, pp. 38939-38945, Nov 2021.
- R. Wang, D. Chen, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Al0. 3InAsSb/Al0. 7InAsSb Digital Alloy nBn Photodetectors," Journal of Lightwave Technology, vol. 40, no. 1, pp. 113-120, Oct 2021.
- D. Chen, R. Wang, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system," Applied Physics Letters, vol. 119, no. 3, pp. 031101, Jul 2021.
- D. Chen, J. A. McArthur, S. D. March, X. Xue, A. H. Jones, A. A. Dadey, S. R. Bank, and J. C. Campbell, "Comparison and analysis of Al0. 7InAsSb avalanche photodiodes with different background doping polarities," Applied Physics Letters, vol. 119, no. 3, pp. 032101, Jul 2021.
- Y. Yuan, J. Zheng, K. Sun, A. H. Jones, A. K. Rockwell, S. D. March, Y. Shen, S. R. Bank, and J. C. Campbell, "Stark‐Localization‐Limited Franz–Keldysh Effect in InAlAs Digital Alloys," physica status solidi (RRL) – Rapid Research Letters, vol. 13, no. 9, pp. 1900272, Jun 2019.
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009.