Publications

Displaying 6 publications
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Journal Article

  1. H. R. Seren, J. Zhang, G. R. Keiser, S. J. Maddox, X. Zhao, K. Fan, S. R. Bank, X. Zhang, and R. D. Averitt, "Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials," Light: Science & Applications, vol. 5, no. 5, pp. e16078, May 2016. Digital object identifier
  2. M. Wagner, A. S. McLeod, S. J. Maddox, Z. Fei, M. Liu, R. D. Averitt, M. M. Fogler, S. R. Bank, F. Keilmann, and D. N. Basov, "Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy," Nano Lett., vol. 14, no. 8, pp. 4529, Aug 2014. Digital object identifier
  3. R. D. Averitt, W. J. Padilla, H. Tong. Chen, J. F. O Hara, A. J. Taylor, C. Highstrete, M. L. Lee, J. M. O. Zide, S. R. Bank, A. C. Gossard, M. Anwar, A. J. DeMaria, and M. S. Shur, "Terahertz metamaterial devices," Proc. SPIE, vol. 6772, pp. 677209, Sep 2007. Digital object identifier
  4. H. Tong. Chen, W. J. Padilla, J. M. O. Zide, S. R. Bank, A. C. Gossard, A. J. Taylor, and R. D. Averitt, "Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices," Opt. Lett., vol. 32, no. 12, pp. 1620-1622, Jun 2007. Digital object identifier
  5. T. Chung, S. R. Bank, J. Epple, and K. Chien. Hsieh, "Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 835-839, May 2001. Digital object identifier
  6. T. Chung, S. R. Bank, and K. Chien. Hsieh, "High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD," Electron. Lett., vol. 36, no. 22, pp. 1885-1886, Oct 2000. Digital object identifier