Publications

Displaying 7 publications
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Journal Article

  1. Z. Yao, V. Semenenko, J. Zhang, S. Mills, X. Zhao, X. Chen, H. Hu, R. Mescall, T. Ciavatti, S. D. March, S. R. Bank, T. H. Tao, X. Zhang, V. Perebeinos, Q. Dai, X. Du, and M. Liu, "Photo-induced terahertz near-field dynamics of graphene/InAs heterostructures," Optix Express, vol. 27, no. 10, pp. 13611, May 2019. Digital object identifier
  2. A. Hosseini, D. Kwong, Y. Zhang, S. A. Chandorkar, F. Crnogorac, A. Carlson, B. Fallah, S. R. Bank, E. Tutuc, J. Rogers, F. W. Pease, and R. T. Chen, "On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems," J. Vac. Sci. Technol. B, vol. 28, no. 6, pp. C6O1-C6O7, Nov 2010. Digital object identifier
  3. Y. Chen, Y. Zhao, A. Hosseini, D. Kwong, W. Jiang, S. R. Bank, E. Tutuc, and R. T. Chen, "Delay-Time-Enhanced Flat-Band Photonic Crystal Waveguides with Capsule-Shaped Holes on Silicon Nanomembrane," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 5, pp. 1510-1514, Sep 2009. Digital object identifier
  4. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier
  5. D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, and S. K. Banerjee, "GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization," APL, vol. 91, no. 19, pp. 193503, Sep 2007. Digital object identifier

Conference Paper

  1. Z. Yao, J. Zhang, S. Mills, X. Zhao, X. Chen, V. Semenenko, H. Hu, T. Ciavatti, S. D. March, S. R. Bank, H. Tao, V. Perebeinos, X. Zhang, Q. Dai, X. Du, and M. Liu, "Near Field Optical-Pump-Terahertz-Probe Experiments on Graphene/InAs Heterostructure," American Physical Society March Meeting (APS), Boston, MA, Mar 2019.
  2. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.