Publications
Journal Article
- H. Karimi, D. J. Herrera, A. A. Dadey, D. Wei, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Analysis of the effect of different scattering mechanisms on the excess noise behavior of Sb-based avalanche photodiodes," Optics Express, vol. 33, no. 4, pp. 7337-7344, Feb 2025.
- J. A. McArthur, A. A. Dadey, K. Circir, S. D. March, X. Xue, D. Chen, A. H. Jones, A. Dolocan, J. C. Campbell, and S. R. Bank, "Source impurity contributions and polarity inverting in the unintentional doping of AlInAsSb digital alloys grown via molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 2, pp. 392-399, Dec 2024.
- A. Hosseini, D. Kwong, Y. Zhang, S. A. Chandorkar, F. Crnogorac, A. Carlson, B. Fallah, S. R. Bank, E. Tutuc, J. Rogers, F. W. Pease, and R. T. Chen, "On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems," J. Vac. Sci. Technol. B, vol. 28, no. 6, pp. C6O1-C6O7, Nov 2010.
- Y. Chen, Y. Zhao, A. Hosseini, D. Kwong, W. Jiang, S. R. Bank, E. Tutuc, and R. T. Chen, "Delay-Time-Enhanced Flat-Band Photonic Crystal Waveguides with Capsule-Shaped Holes on Silicon Nanomembrane," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 5, pp. 1510-1514, Sep 2009.
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009.
- D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, and S. K. Banerjee, "GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization," APL, vol. 91, no. 19, pp. 193503, Sep 2007.
Conference Paper
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.