Publications
Journal Article
- H. Karimi, D. J. Herrera, A. A. Dadey, D. Wei, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Analysis of the effect of different scattering mechanisms on the excess noise behavior of Sb-based avalanche photodiodes," Optics Express, vol. 33, no. 4, pp. 7337-7344, Feb 2025.
- D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023.
- D. Chen, K. Sun, Y. Chen, A. H. Jones, A. A. Dadey, B. Guo, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model," Optics Express, vol. 30, no. 14, pp. 25262, Jul 2022.
- A. H. Jones, Y. Shen, K. Sun, D. Chen, S. D. March, S. R. Bank, and J. C. Campbell, "Room-temperature bandwidth of 2-\µm AlInAsSb avalanche photodiodes," Optics Express, vol. 29, no. 23, pp. 38939-38945, Nov 2021.
- Y. Yuan, J. Zheng, K. Sun, A. H. Jones, A. K. Rockwell, S. D. March, Y. Shen, S. R. Bank, and J. C. Campbell, "Stark‐Localization‐Limited Franz–Keldysh Effect in InAlAs Digital Alloys," physica status solidi (RRL) – Rapid Research Letters, vol. 13, no. 9, pp. 1900272, Jun 2019.
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009.
Conference Paper
- A. M. Crook, H. P. Nair Jong Ho Lee, D. A. Ferrer, D. Akinwande, and S. R. Bank, "Nanoparticle Seeded Growth of ErAs Films Embedded in GaAs," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.