Publications
Journal Article
- D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023.
- D. Chen, K. Sun, Y. Chen, A. H. Jones, A. A. Dadey, B. Guo, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model," Optics Express, vol. 30, no. 14, pp. 25262, Jul 2022.
- B. Guo, S. Z. Ahmed, X. Xue, A. K. Rockwell, J. Ha, S. Lee, B. Liang, A. H. Jones, J. A. McArthur, S. H. Kodati, T. J. Ronningen, S. Krishna, J. Kim, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes," Journal of Lightwave Technology, Jun 2022.
- M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes," Applied Physics Letters, vol. 108, no. 19, pp. 191108, May 2016.
- M. Ren, S. J. Maddox, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb/GaSb staircase avalanche photodiode," APL, vol. 108, no. 8, pp. 081101, Feb 2016.
- M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, and J. C. Campbell, "Low-noise AlInAsSb avalanche photodiode," APL, vol. 108, no. 8, pp. 081102, Feb 2016.
- R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005.
- R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005.
Conference Paper
- R. H. El-Jaroudi, A. H. Jones, A. A. Dadey, B. Guo, X. Xue, J. C. Campbell, and S. R. Bank, "Growth of B-III-V alloys for GaAs-based optoelectronic devices," 62nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
- R. H. El-Jaroudi, A. A. Dadey, X. Xue, A. H. Jones, B. Guo, J. C. Campbell, and S. R. Bank, "Reducing III-V avalanche photodiode noise through the introduction of boron," 79th Device Research Conf. (DRC), Virtual, Jun 2021.
- S. D. March, A. H. Jones, A. K. Rockwell, M. Ren, Y. Chen, M. E. Woodson, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Modeling and Measurement of Carrier Trapping and Tunneling in AlxIn1-xAsySb1-y Digital Alloys," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
- M. Ren, M. E. Woodson, Y. Chen, J. C. Campbell, S. J. Maddox, and S. R. Bank, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," 29th IEEE Photonics Conference (IPC), Waikoloa Village, HI, Oct 2016.
- S. J. Maddox, M. Ren, A. K. Rockwell, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "Low-Noise High-Gain Tunneling Staircase Photodetector," 74th Device Research Conf. (DRC), Newark, DE, Jun 2016.
- (Late News) M. Ren, S. J. Maddox, A. K. Rockwell, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," 74th Device Research Conf. (DRC), Newark, DE, Jun 2016.
- (Invited) M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "Low Excess Noise AlxIn1-xAsySb1-y (x: 0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2016.