Publications

Displaying 6 publications
Quote related keywords (e.g. "66th Electronic Materials Conf.")

Journal Article

  1. D. Wei, B. Gao, A. A. Dadey, J. A. McArthur, J. Bai, S. R. Bank, and J. C. Campbell, "Broadband Quantum Efficiency Enhancement of AlInAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces," Adv. Phot. Res., Jun 2024. Digital object identifier
  2. D. Wei, A. A. Dadey, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Enhancing Extended SWIR AlInAsSb PIN Photodetectors with All-Dielectric Amorphous Germanium Photon-Capturing Gratings," ACS Photonics, Jan 2024. Digital object identifier
  3. D. Wei, S. J. Maddox, P. Sohr, S. R. Bank, and S. Law, "Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant," Optical Materials Express, vol. 10, no. 2, pp. 302-311, Feb 2020. Digital object identifier
  4. D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1. 5 \µm," Electron. Lett., vol. 40, no. 23, pp. 1487-1488, Nov 2004. Digital object identifier
  5. T. Chung, S. R. Bank, J. Epple, and K. Chien. Hsieh, "Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 835-839, May 2001. Digital object identifier
  6. T. Chung, S. R. Bank, and K. Chien. Hsieh, "High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD," Electron. Lett., vol. 36, no. 22, pp. 1885-1886, Oct 2000. Digital object identifier