Publications

Displaying 6 publications
Quote related keywords (e.g. "66th Electronic Materials Conf.")

Journal Article

  1. D. Jung, J. Faucher, S. Mukherjee, A. Akey, D. J. Ironside, M. Cabral, X. Sang, J. Lebeau, S. R. Bank, T. Buonassisi, O. Moutanabbir, and M. L. Lee, "Highly tensile-strained Ge/InAlAs nanocomposites," Nature Communications, vol. 8, pp. 14204, Jan 2017. Digital object identifier
  2. T. Chung, S. R. Bank, J. Epple, and K. Chien. Hsieh, "Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 835-839, May 2001. Digital object identifier
  3. T. Chung, S. R. Bank, and K. Chien. Hsieh, "High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD," Electron. Lett., vol. 36, no. 22, pp. 1885-1886, Oct 2000. Digital object identifier

Conference Paper

  1. E. Y. Wang, H. Karimi, M. Waqar, X. Pan, J. C. Campbell, and S. R. Bank, "Growth and Characterization of Ternary-Containing AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. A. F. Ricks, K. C. Wen, M. Brown, Z. Sakotic, M. Waqar, X. Pan, D. Wasserman, and S. R. Bank, "Coupled Quantum Well Interface Quality and Second-Harmonic Generation Effects," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. S. P. Mallick, E. Y. Wang, J. A. McArthur, C. Du, S. D. March, X. Pan, and S. R. Bank, "The effect of group-V "Blow-by" on the structural and optical properties of Alx In1-x Asy Sb1-y digital alloys grown by molecular beam epitaxy," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.