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Journal Article

  1. D. Jung, J. Faucher, S. Mukherjee, A. Akey, D. J. Ironside, M. Cabral, X. Sang, J. Lebeau, S. R. Bank, T. Buonassisi, O. Moutanabbir, and M. L. Lee, "Highly tensile-strained Ge/InAlAs nanocomposites," Nature Communications, vol. 8, pp. 14204, Jan 2017. Digital object identifier
  2. C. S. Schulze, X. Huang, C. Prohl, V. Fullert, S. Rybank, S. J. Maddox, S. D. March, S. R. Bank, M. L. Lee, and A. Lenz, "Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate," APL, vol. 108, no. 14, pp. 143101, Apr 2016. Digital object identifier
  3. T. Chung, S. R. Bank, J. Epple, and K. Chien. Hsieh, "Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 835-839, May 2001. Digital object identifier
  4. T. Chung, S. R. Bank, and K. Chien. Hsieh, "High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD," Electron. Lett., vol. 36, no. 22, pp. 1885-1886, Oct 2000. Digital object identifier