Publications
Journal Article
- D. Jung, D. J. Ironside, S. R. Bank, A. C. Gossard, and J. E. Bowers, "Effect of growth interruption in 1. 55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy," Journal of Applied Physics, vol. 123, no. 20, pp. 205302, Dec 2018.
- T. Chung, S. R. Bank, J. Epple, and K. Chien. Hsieh, "Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 835-839, May 2001.
- T. Chung, S. R. Bank, and K. Chien. Hsieh, "High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD," Electron. Lett., vol. 36, no. 22, pp. 1885-1886, Oct 2000.
Conference Paper
- K. M. McNicholas, R. H. El-Jaroudi, J. Kopaczek, A. H. Jones, D. J. Ironside, R. Judrawiec, J. C. Campbell, and S. R. Bank, "Progress towards B-III-V optoelectronic devices on silicon," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.