Publications

Displaying 6 publications
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Journal Article

  1. T. Kim, A. M. Skipper, S. R. Bank, and E. T. Yu, "Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions," Journal of Applied Physics, vol. 137, no. 7, pp. 075702, Feb 2025. Digital object identifier
  2. A. M. Garcia, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Experimentally calibrated modeling of periodic supply epitaxy for selective area growth by molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 4, pp. 963-969, Jan 2025. Digital object identifier
  3. M. Shamim. Reza, T. Dey, A. W. Arbogast, A. J. Muhowski, M. W. Holtz, C. A. Stephenson, S. R. Bank, D. Wasserman, and M. A. Wistey, "Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)," Journal of Applied Physics, vol. 134, no. 18, Nov 2023. Digital object identifier
  4. T. Dey, A. W. Arbogast, Q. Meng, M. Shamim. Reza, A. J. Muhowski, J. J. P. Cooper, E. Ozdemir, F. U. Naab, T. Borrely, J. Anderson, R. S. Goldman, D. Wasserman, S. R. Bank, M. W. Holtz, E. L. Piner, and M. A. Wistey, "Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy," Journal of Applied Physics, vol. 134, no. 19, Nov 2023. Digital object identifier
  5. T. Dey, M. Shamim. Reza, A. W. Arbogast, M. W. Holtz, R. Droopad, S. R. Bank, and M. A. Wistey, "Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures," Applied Physics Letters, vol. 121, no. 12, pp. 122104, Sep 2022. Digital object identifier

Conference Paper

  1. A. M. Crook, H. P. Nair Jong Ho Lee, D. A. Ferrer, D. Akinwande, and S. R. Bank, "Nanoparticle Seeded Growth of ErAs Films Embedded in GaAs," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.