Publications

Displaying 6 publications
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Journal Article

  1. M. S. Reza, T. Dey, A. W. Arbogast, Q. Meng, S. R. Bank, and M. A. Wistey, "Confinement and threshold modeling for high temperature GeSn and GeC/GeCSn lasers," IEEE J. Sel. Topics Quantum Electron., vol. 31, no. 1, pp. 1503011, Jan 2025. Digital object identifier
  2. Z. Dang, W. Wang, J. Chen, E. S. Walker, S. R. Bank, D. Akinwande, Z. Ni, and L. Tao, "Vis-NIR photodetector with microsecond response enabled by 2D bismuth/Si(111) heterojunction," 2D Materials, vol. 8, no. 3, pp. 035002, Mar 2021. Digital object identifier

Conference Paper

  1. E. Y. Wang, H. Karimi, M. Waqar, X. Pan, J. C. Campbell, and S. R. Bank, "Growth and Characterization of Ternary-Containing AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. E. Y. Wang, J. A. McArthur, H. Karimi, P. Devaney, J. C. Campbell, and S. R. Bank, "Effect of Varying Period Structure on Tunneling Current in AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. J. A. McArthur, A. A. Dadey, E. Y. Wang, H. Karimi, J. C. Campbell, and S. R. Bank, "Suppressing AlInAsSb Avalanche Photodiode Dark Currents by Tuning the Absorption Region," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  4. J. A. McArthur, H. Karimi, L. Sauer, J. C. Campbell, and S. R. Bank, "Manipulating the opto-electronic properties of AlInAsSb digital alloys by adjusting the period thickness," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.