Publications

Displaying 5 publications

T. Dey, A. W. Arbogast, Q. Meng, M. Shamim. Reza, A. J. Muhowski, J. J. P. Cooper, E. Ozdemir, F. U. Naab, T. Borrely, J. Anderson, R. S. Goldman, D. Wasserman, S. R. Bank, M. W. Holtz, E. L. Piner, and M. A. Wistey, "Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy," Journal of Applied Physics, vol. 134, no. 19, Nov 2023.
M. Shamim. Reza, T. Dey, A. W. Arbogast, A. J. Muhowski, M. W. Holtz, C. A. Stephenson, S. R. Bank, D. Wasserman, and M. A. Wistey, "Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)," Journal of Applied Physics, vol. 134, no. 18, Nov 2023.
T. Dey, M. Shamim. Reza, A. W. Arbogast, M. W. Holtz, R. Droopad, S. R. Bank, and M. A. Wistey, "Molecular beam epitaxy of highly crystalline GeSnC using CBr₄ at low temperatures," Applied Physics Letters, vol. 121, no. 12, pp. 122104, Sep 2022.
D. Wei, S. J. Maddox, P. Sohr, S. R. Bank, and S. Law, "Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant," Optical Materials Express, vol. 10, no. 2, pp. 302-311, Feb 2020.
M. M. Oye, M. A. Wistey, J. M. Reifsnider, S. Agarwal, T. J. Mattord, S. Govindaraju, G. A. Hallock, A. L. Holmes Jr., S. R. Bank, H. B. Yuen, and J. S. Harris, "Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides," APL, vol. 86, no. 22, pp. 221902, May 2005.