Publications

Displaying 7 publications
Quote related keywords (e.g. "66th Electronic Materials Conf.")

Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  3. P. Kompella, B. Gracia, L. LeBlanc, S. Engelman, C. Kulkarni, N. Desai, V. June, S. D. March, S. Pattengale, G. Rodriguez-Rivera, S. Woo. Ryu, I. Strohkendl, P. Mandke, and G. Clark, "Interactive youth science workshops benefit student participants and graduate student mentors," PLOS Biology, vol. 18, no. 3, pp. 1-10, Mar 2020. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. R. C. White, Q. Meng, M. Lopez, A. Ponnekanti, L. J. Nordin, A. J. Muhowski, D. Wasserman, S. R. Bank, and M. A. Wistey, "Growth and Characterization of InSbBi: A (Potentially) Not So Highly Mismatched Alloy for Wavelength Extension on InSb," 21st International Conference on Molecular Beam Epitaxy (ICMBE), Virtual, Sep 2021.
  3. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  4. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.