Publications

Displaying 4 publications
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Journal Article

  1. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier

Conference Paper

  1. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, J. Kopaczek, R. Kudrawiec, and S. R. Bank, "BGaInAs/GaAs quantum wells for 1. 3µm lasers," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  2. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, I. E. Olivares, R. C. White, J. A. McArthur, and S. R. Bank, "Boron Alloys for GaAs-based 1. 3μm Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2019.
  3. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.