Publications

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Journal Article

  1. J. Zheng, S. Z. Ahmed, Y. Yuan, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 06, pp. 1236-1240, Nov 2020. Digital object identifier
  2. J. Zheng, S. Z. Ahmed, Y. Yuan, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 6, pp. 1236-1240, Mar 2020. Digital object identifier
  3. J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Simulations for InAlAs digital alloy avalanche photodiodes," Applied Physics Letters, vol. 115, no. 17, pp. 171106, Oct 2019. Digital object identifier
  4. J. Zheng, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. Z. Ahmed, C. A. Dukes, A. W. Ghosh, S. R. Bank, and J. C. Campbell, "Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition," Applied Physics Letters, vol. 115, no. 12, pp. 122105, Sep 2019. Digital object identifier
  5. J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Digital Alloy InAlAs Avalanche Photodiodes," Journal of Lightwave Technology, vol. 36, no. 17, pp. 3580-3585, Sep 2018. Digital object identifier
  6. Y. Yuan, J. Zheng, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys," Photon. Res., vol. 6, no. 8, pp. 794-799, Aug 2018. Digital object identifier
  7. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials," Applied Physics Letters, vol. 113, no. 10, pp. 102106, Dec 2018. Digital object identifier
  8. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  9. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  10. Y. Xin, .C . Y. Lin, Y. Li, H. P. Bae, H. B. Yuen, M. A. Wistey, J. S. Harris, S. R. Bank, and L. F. Lester, "Monolithic 1. 55 \µm GaInNAsSb quantum well passively modelocked lasers," Electron. Lett., vol. 44, no. 9, pp. 581-582, Apr 2008. Digital object identifier
  11. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  12. R. D. Averitt, W. J. Padilla, H. Tong. Chen, J. F. O Hara, A. J. Taylor, C. Highstrete, M. L. Lee, J. M. O. Zide, S. R. Bank, A. C. Gossard, M. Anwar, A. J. DeMaria, and M. S. Shur, "Terahertz metamaterial devices," Proc. SPIE, vol. 6772, pp. 677209, Sep 2007. Digital object identifier
  13. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  14. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  15. H. Tong. Chen, W. J. Padilla, J. M. O. Zide, S. R. Bank, A. C. Gossard, A. J. Taylor, and R. D. Averitt, "Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices," Opt. Lett., vol. 32, no. 12, pp. 1620-1622, Jun 2007. Digital object identifier
  16. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  17. M. P. Hanson, S. R. Bank, J. M. O. Zide, J. D. Zimmerman, and A. C. Gossard, "Controlling electronic properties of epitaxial nanocomposites of dissimilar materials," J. Cryst. Growth, vol. 301-302, pp. 4-9, Apr 2007. Digital object identifier
  18. W. Yi, V. Narayanamurti, J. M. O. Zide, S. R. Bank, and A. C. Gossard, "Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study," Phys. Rev. B, vol. 75, no. 11, pp. 115333, Mar 2007. Digital object identifier
  19. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  20. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  21. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  22. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  23. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  24. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications," APL, vol. 88, no. 22, pp. 221115, Dec 2006. Digital object identifier
  25. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  26. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells," APL, vol. 88, no. 22, pp. 221913, May 2006. Digital object identifier
  27. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  28. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006. Digital object identifier
  29. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "The role of antimony on properties of widely varying GaInNAsSb compositions," J. Appl. Phys., vol. 99, no. 9, pp. 093504, Dec 2006. Digital object identifier
  30. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005. Digital object identifier
  31. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005. Digital object identifier
  32. M. A. Wistey, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "Nitrogen plasma optimization for high-quality dilute nitrides," J. Cryst. Growth, vol. 278, no. 1-4, pp. 229-233, May 2005. Digital object identifier
  33. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  34. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  35. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, "Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1328-1332, Dec 2005. Digital object identifier
  36. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier

Conference Paper

  1. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, S. J. Maddox, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Band Structure Influence on Noise Properties of III-V Digital Alloys," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  2. A. M. Crook, H. P. Nair, K. Vijayraghavan, M. A. Wistey, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and S. R. Bank, "Annealing Stability of Nanoparticle-Enhanced Tunnel Junctions for High-Efficiency Solar Cells and Mid-Infrared Lasers," 51st Electronic Materials Conf. (EMC), University Park, PA, Jun 2009.
  3. H. P. Nair, A. M. Crook, J. M. O. Zide, M. P. Hanson, A. C. Gossard, and S. R. Bank, "Nanoparticle-enhanced tunnel junctions for high efficiency mid-infrared lasers," 50th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2008.
  4. Y. Lin, L. F. Lester, S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Monolithic 1. 55-µm GaInNAsSb Quantum Well Mode-Locked Lasers," Conf. on Lasers and Electro Optics (CLEO), Baltimore, MD, May 2007.
  5. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, T. Sarmiento, A. Marshall, and J. S. Harris, "Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  6. A. C. Gossard, M. P. Hanson, J. M. O. Zide, J. D. Zimmerman, S. R. Bank, E. Brown, and M. J. Rodwell, "Metal/semiconductor Heterostructures for Terahertz Applications," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  7. S. R. Bank, U. Singisetti, A. M. Crook, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and M. J. Rodwell, "MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts," North American Molecular Beam Epitaxy Conf. (NAMBE), Sep 2006.
  8. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "TEM Analysis of Growth and Annealing Temperature Effects on GaInNAsSb Quantum Wells," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  9. (Plenary) A. C. Gossard, M. P. Hanson, J. M. O. Zide, J. D. Zimmerman, and S. R. Bank, "Growth and Uses of Metal/Semiconductor Heterostructures," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  10. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
  11. S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Strong Luminescence Enhancement in GaInNAsSb Quantum Wells Through Variation of the Group-V Fluxes," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  12. H. P. Bae, S. R. Bank, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Analysis of Relative Speed and Temperature Dependence of Constituent Processes in the Annealing of GaInNAs(Sb)," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  13. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  14. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.