Publications

Displaying 26 publications
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Journal Article

  1. F. He, N. T. Sheehan, S. R. Bank, and Y. Wang, "Giant electron-phonon coupling detected under surface plasmon resonance in Au film," Opt. Lett., vol. 44, no. 18, pp. 4590-4593, Sep 2019. Digital object identifier
  2. K. Chen, X. Meng, F. He, Y. Zhou, J. Jeong, N. T. Sheehan, S. R. Bank, and Y. Wang, "Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 4, pp. 348-359, Aug 2018. Digital object identifier
  3. K. Chen, N. T. Sheehan, F. He, X. Meng, S. C. Mason, S. R. Bank, and Y. Wang, "Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique," ACS Photonics, vol. 4, pp. 1440-1446, May 2017. Digital object identifier
  4. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  5. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  6. R. D. Averitt, W. J. Padilla, H. Tong. Chen, J. F. O Hara, A. J. Taylor, C. Highstrete, M. L. Lee, J. M. O. Zide, S. R. Bank, A. C. Gossard, M. Anwar, A. J. DeMaria, and M. S. Shur, "Terahertz metamaterial devices," Proc. SPIE, vol. 6772, pp. 677209, Sep 2007. Digital object identifier
  7. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  8. H. Tong. Chen, W. J. Padilla, J. M. O. Zide, S. R. Bank, A. C. Gossard, A. J. Taylor, and R. D. Averitt, "Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices," Opt. Lett., vol. 32, no. 12, pp. 1620-1622, Jun 2007. Digital object identifier
  9. M. P. Hanson, S. R. Bank, J. M. O. Zide, J. D. Zimmerman, and A. C. Gossard, "Controlling electronic properties of epitaxial nanocomposites of dissimilar materials," J. Cryst. Growth, vol. 301-302, pp. 4-9, Apr 2007. Digital object identifier
  10. W. Yi, V. Narayanamurti, J. M. O. Zide, S. R. Bank, and A. C. Gossard, "Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study," Phys. Rev. B, vol. 75, no. 11, pp. 115333, Mar 2007. Digital object identifier
  11. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1324-1327, May 2005. Digital object identifier
  12. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier

Conference Paper

  1. R. H. El-Jaroudi, N. T. Sheehan, K. M. McNicholas, D. J. Ironside, A. F. Briggs, A. M. Skipper, S. D. Sifferman, and S. R. Bank, "Strain Engineering of Nanomembranes with Amorphous Silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  2. (Invited) S. R. Bank, S. D. Sifferman, H. P. Nair, N. T. Sheehan, R. Salas, S. J. Maddox, and A. M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb 2016.
  3. S. D. Sifferman, R. Salas, S. J. Maddox, H. P. Nair, N. T. Sheehan, E. M. Krivoy, E. S. Walker, and S. R. Bank, "Surfactant-mediated growth of highly strained materials for mid-infrared applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  4. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  5. H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, and S. R. Bank, "3. 4 \µm Diode Lasers Employing Al-Free GaInAsSb/GaSb MQW Active Regions at 20°C," 71st Device Research Conf. (DRC), South Bend, IN, Jun 2013.
  6. A. M. Crook, H. P. Nair, K. Vijayraghavan, M. A. Wistey, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and S. R. Bank, "Annealing Stability of Nanoparticle-Enhanced Tunnel Junctions for High-Efficiency Solar Cells and Mid-Infrared Lasers," 51st Electronic Materials Conf. (EMC), University Park, PA, Jun 2009.
  7. H. P. Nair, A. M. Crook, J. M. O. Zide, M. P. Hanson, A. C. Gossard, and S. R. Bank, "Nanoparticle-enhanced tunnel junctions for high efficiency mid-infrared lasers," 50th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2008.
  8. A. C. Gossard, M. P. Hanson, J. M. O. Zide, J. D. Zimmerman, S. R. Bank, E. Brown, and M. J. Rodwell, "Metal/semiconductor Heterostructures for Terahertz Applications," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  9. S. R. Bank, U. Singisetti, A. M. Crook, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and M. J. Rodwell, "MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts," North American Molecular Beam Epitaxy Conf. (NAMBE), Sep 2006.
  10. (Plenary) A. C. Gossard, M. P. Hanson, J. M. O. Zide, J. D. Zimmerman, and S. R. Bank, "Growth and Uses of Metal/Semiconductor Heterostructures," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  11. M. A. Wistey, S. R. Bank, H. B. Yuen, T. Gugov, and J. S. Harris, "Protecting Wafer Surface During GaInNAs Plasma Ignition by Use of an Arsenic Cap," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  12. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  13. T. Gugov, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Structural Characterization of Molecular Beam Epitaxy Grown GaInNAs and GaInNAsSb Quantum Wells by Transmission Electron Microscopy," Materials Research Symposium (MRS), San Francisco, CA, Apr 2004.
  14. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of Transmission Electron Microscopy in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by Molecular Beam Epitaxy," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.