Publications

Displaying 8 publications
Quote related keywords (e.g. "66th Electronic Materials Conf.")

Journal Article

  1. I. A. Gulyas, C. A. Stephenson, Q. Meng, S. R. Bank, and M. A. Wistey, "The Carbon State in Dilute Germanium Carbides," Journal of Applied Physics, vol. 129, no. 5, pp. 055701, Feb 2021. Digital object identifier
  2. H. R. Seren, J. Zhang, G. R. Keiser, S. J. Maddox, X. Zhao, K. Fan, S. R. Bank, X. Zhang, and R. D. Averitt, "Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials," Light: Science & Applications, vol. 5, no. 5, pp. e16078, May 2016. Digital object identifier
  3. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, I. A. Gulyas, R. C. White, K. M. McNicholas, T. Dey, S. R. Bank, and M. A. Wistey, "Effect of B-In interactions on the band structure and optical properties of BGa(In)As," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  2. H. R. Seren, G. R. Keiser, J. Zhang, S. J. Maddox, X. Zhao, K. Fan, S. R. Bank, X. Zhang, and R. D. Averitt, "THz materials discovery and integration: the search for novel functionality," International Conf. on Infrared, Millimeter, and Terahertz Waves, Hong Kong, Aug 2015.
  3. H. R. Seren, J. Zhang, X. Zhao, K. Fan, S. R. Bank, R. D. Averitt, and X. Zhang, "InAs Metamaterials on Flexible Substrate," 2014 Materials Research Society (MRS) Fall Meeting, Boston, MA, Dec 2014.
  4. H. R. Seren, J. Zhang, G. R. Keiser, S. J. Maddox, K. Fan, L. Cao, S. R. Bank, X. Zhang, and R. D. Averitt, "Nonlinear THz Plasmonic Disk Resonators," American Physical Society (APS) March Meeting, Baltimore, MD, Mar 2013.
  5. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.