Publications

Displaying 4 publications
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Journal Article

  1. C. S. Schulze, X. Huang, C. Prohl, V. Fullert, S. Rybank, S. J. Maddox, S. D. March, S. R. Bank, M. L. Lee, and A. Lenz, "Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate," APL, vol. 108, no. 14, pp. 143101, Apr 2016. Digital object identifier
  2. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier

Conference Paper

  1. D. J. Ironside, E. M. Krivoy, V. D. Dasika, E. S. Walker, K. Nguyen, J. Jeong, Y. Wang, and S. R. Bank, "Tailored III-V Metamorphic Buffer Layers utilizing Embedded Rare Earth Monopnictides for Optoelectronic Applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  2. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.