Publications

Displaying 5 publications
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Journal Article

  1. R. Maiti, C. Patil, M. A. S. R. Saadi, T. Xie, J. G. Azadani, B. Uluutku, R. Amin, A. F. Briggs, M. Miscuglio, D. Van. Thourhout, S. D. Solares, T. Low, R. Agarwal, S. R. Bank, and V. J. Sorger, "Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits," Nature Photonics, Jun 2020. Digital object identifier
  2. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier

Conference Paper

  1. R. C. White, Q. Meng, M. Lopez, A. Ponnekanti, L. J. Nordin, A. J. Muhowski, D. Wasserman, S. R. Bank, and M. A. Wistey, "Growth and Characterization of InSbBi: A (Potentially) Not So Highly Mismatched Alloy for Wavelength Extension on InSb," 21st International Conference on Molecular Beam Epitaxy (ICMBE), Virtual, Sep 2021.
  2. R. Maiti, C. Patil, T. Xie, J. G. Azadani, R. Amin, M. Miscuglio, D. Van. Thourhout, T. Low, S. R. Bank, and V. J. Sorger, "Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm," Conference on Lasers and Electro-Optics (CLEO), Washington, DC, Jun 2020.
  3. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.