Publications
Journal Article
- H. Karimi, D. J. Herrera, A. A. Dadey, D. Wei, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Analysis of the effect of different scattering mechanisms on the excess noise behavior of Sb-based avalanche photodiodes," Optics Express, vol. 33, no. 4, pp. 7337-7344, Feb 2025.
- J. A. McArthur, A. A. Dadey, K. Circir, S. D. March, X. Xue, D. Chen, A. H. Jones, A. Dolocan, J. C. Campbell, and S. R. Bank, "Source impurity contributions and polarity inverting in the unintentional doping of AlInAsSb digital alloys grown via molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 2, pp. 392-399, Dec 2024.
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004.
Conference Paper
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.