Publications
Journal Article
- H. R. Seren, J. Zhang, G. R. Keiser, S. J. Maddox, X. Zhao, K. Fan, S. R. Bank, X. Zhang, and R. D. Averitt, "Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials," Light: Science & Applications, vol. 5, no. 5, pp. e16078, May 2016.
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004.
Conference Paper
- H. R. Seren, G. R. Keiser, J. Zhang, S. J. Maddox, X. Zhao, K. Fan, S. R. Bank, X. Zhang, and R. D. Averitt, "THz materials discovery and integration: the search for novel functionality," International Conf. on Infrared, Millimeter, and Terahertz Waves, Hong Kong, Aug 2015.
- H. R. Seren, J. Zhang, X. Zhao, K. Fan, S. R. Bank, R. D. Averitt, and X. Zhang, "InAs Metamaterials on Flexible Substrate," 2014 Materials Research Society (MRS) Fall Meeting, Boston, MA, Dec 2014.
- H. R. Seren, J. Zhang, G. R. Keiser, S. J. Maddox, K. Fan, L. Cao, S. R. Bank, X. Zhang, and R. D. Averitt, "Nonlinear THz Plasmonic Disk Resonators," American Physical Society (APS) March Meeting, Baltimore, MD, Mar 2013.
- A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.