Publications

Displaying 6 publications
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Journal Article

  1. S. Rahimi, E. M. Krivoy, J. Lee, M. E. Michael, S. R. Bank, and D. Akinwande, "Temperature dependence of the electrical resistivity of LaLuAs," AIP Advances, vol. 3, no. 8, pp. 082102, Jul 2013. Digital object identifier
  2. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier

Conference Paper

  1. M. Miscuglio, Z. Hu, S. Li, J. Gu, A. Babakhani, P. Gupta, C. Wong, D. Pan, S. R. Bank, H. Dalir, and V. J. Sorger, "Massive parallelism Fourier-optic convolutional processor," Signal Processing in Photonic Communications (SPPCOM), Washington, DC, Jul 2020.
  2. M. Miscuglio, Z. Hu, S. Li, J. Gu, A. Babakhani, P. Gupta, C. Wong, D. Pan, S. R. Bank, H. Dalir, and V. J. Sorger, "Million-channel parallelism Fourier-optic convolutional filter and neural network processor," Conference on Lasers and Electro-Optics (CLEO), Washington, DC, Jun 2020.
  3. S. Rahimi, E. M. Krivoy, J. Lee, S. R. Bank, and D. Akinwande, "Temperature and Thickness Dependence of Electrical Resistivity of LaLuAs," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
  4. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.