Publications
Journal Article
- T. Kim, A. M. Skipper, S. R. Bank, and E. T. Yu, "Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions," Journal of Applied Physics, vol. 137, no. 7, pp. 075702, Feb 2025.
- A. M. Garcia, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Experimentally calibrated modeling of periodic supply epitaxy for selective area growth by molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 4, pp. 963-969, Jan 2025.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004.
Conference Paper
- M. Miscuglio, Z. Hu, S. Li, J. Gu, A. Babakhani, P. Gupta, C. Wong, D. Pan, S. R. Bank, H. Dalir, and V. J. Sorger, "Massive parallelism Fourier-optic convolutional processor," Signal Processing in Photonic Communications (SPPCOM), Washington, DC, Jul 2020.
- M. Miscuglio, Z. Hu, S. Li, J. Gu, A. Babakhani, P. Gupta, C. Wong, D. Pan, S. R. Bank, H. Dalir, and V. J. Sorger, "Million-channel parallelism Fourier-optic convolutional filter and neural network processor," Conference on Lasers and Electro-Optics (CLEO), Washington, DC, Jun 2020.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.