Publications
Journal Article
- A. Sciambi, M. Pelliccione, M. P. Lilly, S. R. Bank, A. C. Gossard, L. N. Pfeiffer, K. W. West, D. Goldhaber-Gordon, K. Deguchi, and Y. Mizuguchi, "Vertical Field-Effect Transistor Based on Wavefunction Extension," Phys. Rev. B, vol. 84, no. 8, pp. 085301, Aug 2011.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004.
Conference Paper
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.