Publications

Displaying 7 publications
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Journal Article

  1. D. Wei, B. Gao, A. A. Dadey, J. A. McArthur, J. Bai, S. R. Bank, and J. C. Campbell, "Broadband Quantum Efficiency Enhancement of AlInAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces," Adv. Phot. Res., Jun 2024. Digital object identifier
  2. D. Wei, A. A. Dadey, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Enhancing Extended SWIR AlInAsSb PIN Photodetectors with All-Dielectric Amorphous Germanium Photon-Capturing Gratings," ACS Photonics, Jan 2024. Digital object identifier
  3. D. Wei, S. J. Maddox, P. Sohr, S. R. Bank, and S. Law, "Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant," Optical Materials Express, vol. 10, no. 2, pp. 302-311, Feb 2020. Digital object identifier
  4. W. Sun, Z. Lu, X. Zheng, J. C. Campbell, S. J. Maddox, H. P. Nair, and S. R. Bank, "High-Gain InAs Avalanche Photodiodes," IEEE J. of Quantum Electron., vol. 49, no. 2, pp. 154, Feb 2013. Digital object identifier
  5. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier

Conference Paper

  1. W. Sun, S. J. Maddox, Z. Lu, H. P. Nair, X. Zheng, S. R. Bank, and J. C. Campbell, "Charge-Compensated High Gain InAs Avalanche Photodiodes," IEEE Photonics Conf. (IPC), Burlingame, CA, Sep 2012.
  2. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.