Publications
Journal Article
- W. Sun, Z. Lu, X. Zheng, J. C. Campbell, S. J. Maddox, H. P. Nair, and S. R. Bank, "High-Gain InAs Avalanche Photodiodes," IEEE J. of Quantum Electron., vol. 49, no. 2, pp. 154, Feb 2013.
- Y. Xin, .C . Y. Lin, Y. Li, H. P. Bae, H. B. Yuen, M. A. Wistey, J. S. Harris, S. R. Bank, and L. F. Lester, "Monolithic 1. 55 \µm GaInNAsSb quantum well passively modelocked lasers," Electron. Lett., vol. 44, no. 9, pp. 581-582, Apr 2008.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004.
Conference Paper
- W. Sun, S. J. Maddox, Z. Lu, H. P. Nair, X. Zheng, S. R. Bank, and J. C. Campbell, "Charge-Compensated High Gain InAs Avalanche Photodiodes," IEEE Photonics Conf. (IPC), Burlingame, CA, Sep 2012.
- J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.