Publications

Displaying 5 publications
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Journal Article

  1. W. Zhu, S. Park, M. N. Yogeesh, K. M. McNicholas, S. R. Bank, and D. Akinwande, "Black phosphorus flexible thin film transistors at gigahertz frequencies," Nano Letters, vol. 16, no. 4, pp. 2301-2306, Mar 2016. Digital object identifier
  2. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier

Conference Paper

  1. E. S. Walker, C. J. Brennan, J. Damasco, S. D. March, A. F. Briggs, E. Davis, W. Zhu, D. Akinwande, N. Mason, E. T. Yu, and S. R. Bank, "Growth Optimization of Epitaxial Bismuth Thin Films Towards the 2-D Limit," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  2. H. B. Yuen, M. Seong, S. Yoon, R. Kudrawiec, S. R. Bank, M. A. Wistey, J. Misiewicz, A. Mascarenhas, and J. S. Harris, "Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit," Materials Research Symposium (MRS), Boston, MA, Dec 2004.
  3. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.