Publications
Journal Article
- K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Strain dependence of Auger recombination in 3 \µm GaInAsSb/GaSb type-I active regions," Applied Physics Letters, vol. 116, pp. 262103, Jun 2020.
- S. Rahimi, E. M. Krivoy, J. Lee, M. E. Michael, S. R. Bank, and D. Akinwande, "Temperature dependence of the electrical resistivity of LaLuAs," AIP Advances, vol. 3, no. 8, pp. 082102, Jul 2013.
- K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003.
Conference Paper
- K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Auger Recombination in Strained Mid-Infrared Quantum Wells," Conf. on Lasers and Electro Optics (CLEO), Washington, DC, May 2020.
- S. Rahimi, E. M. Krivoy, J. Lee, S. R. Bank, and D. Akinwande, "Temperature and Thickness Dependence of Electrical Resistivity of LaLuAs," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
- V. Gambin, V. Lordi, W. Ha, M. A. Wistey, K. Volz, S. R. Bank, H. B. Yuen, and J. S. Harris, "High Intensity 1. 3\—1. 6 \µm Luminescence and Structural Changes on Anneal from MBE Grown (Ga,In)(N,As,Sb)," International Conf. on Molecular Beam Epitaxy (MBE), San Fancisco, CA, Sep 2002.