Publications

Displaying 53 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, A. F. Briggs, S. D. Sifferman, L. J. Nordin, and S. R. Bank, "Room-temperature photoluminescence and electroluminescence of 1. 3-\&microm-range BGaInAs quantum wells on GaAs substrates," Applied Physics Letters, vol. 117, pp. 021102, Jul 2020. Digital object identifier
  2. K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Strain dependence of Auger recombination in 3 \&microm GaInAsSb/GaSb type-I active regions," Applied Physics Letters, vol. 116, pp. 262103, Jun 2020. Digital object identifier
  3. D. Jung, D. J. Ironside, S. R. Bank, A. C. Gossard, and J. E. Bowers, "Effect of growth interruption in 1. 55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy," Journal of Applied Physics, vol. 123, no. 20, pp. 205302, Dec 2018. Digital object identifier
  4. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL Materials, vol. 5, no. 9, pp. 096106, Sep 2017. Digital object identifier
  5. R. Salas, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 108, no. 18, pp. 182102, May 2016. Digital object identifier
  6. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  7. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, and S. R. Bank, "Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 106, no. 8, pp. 081103, Feb 2015. Digital object identifier
  8. A. Sciambi, M. Pelliccione, M. P. Lilly, S. R. Bank, A. C. Gossard, L. N. Pfeiffer, K. W. West, D. Goldhaber-Gordon, K. Deguchi, and Y. Mizuguchi, "Vertical Field-Effect Transistor Based on Wavefunction Extension," Phys. Rev. B, vol. 84, no. 8, pp. 085301, Aug 2011. Digital object identifier
  9. A. Sciambi, M. Pelliccione, S. R. Bank, A. C. Gossard, and D. Goldhaber-Gordon, "Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems," APL, vol. 97, no. 13, pp. 132103, Sep 2010. Digital object identifier
  10. G. J. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Height-selective etching for regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1984-1987, Mar 2009. Digital object identifier
  11. U. Singisetti, J. D. Zimmerman, M. A. Wistey, J. Cagnon, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, S. Stemmer, and S. R. Bank, "ErAs epitaxial Ohmic contacts to InGaAs/InP," APL, vol. 94, no. 8, pp. 083505-083505, Feb 2009. Digital object identifier
  12. U. Singisetti, M. A. Wistey, J. D. Zimmerman, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, and S. R. Bank, "Ultralow resistance in situ Ohmic contacts to InGaAs/InP," APL, vol. 93, no. 18, pp. 183502, Nov 2008. Digital object identifier
  13. A. M. Crook, E. Lind, Z. Griffith, M. J. Rodwell, J. D. Zimmerman, A. C. Gossard, and S. R. Bank, "Low resistance, nonalloyed Ohmic contacts to InGaAs," APL, vol. 91, no. 19, pp. 192114, Nov 2007. Digital object identifier
  14. R. D. Averitt, W. J. Padilla, H. Tong. Chen, J. F. O Hara, A. J. Taylor, C. Highstrete, M. L. Lee, J. M. O. Zide, S. R. Bank, A. C. Gossard, M. Anwar, A. J. DeMaria, and M. S. Shur, "Terahertz metamaterial devices," Proc. SPIE, vol. 6772, pp. 677209, Sep 2007. Digital object identifier
  15. H. Tong. Chen, W. J. Padilla, J. M. O. Zide, S. R. Bank, A. C. Gossard, A. J. Taylor, and R. D. Averitt, "Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices," Opt. Lett., vol. 32, no. 12, pp. 1620-1622, Jun 2007. Digital object identifier
  16. M. P. Hanson, S. R. Bank, J. M. O. Zide, J. D. Zimmerman, and A. C. Gossard, "Controlling electronic properties of epitaxial nanocomposites of dissimilar materials," J. Cryst. Growth, vol. 301-302, pp. 4-9, Apr 2007. Digital object identifier
  17. W. Yi, V. Narayanamurti, J. M. O. Zide, S. R. Bank, and A. C. Gossard, "Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study," Phys. Rev. B, vol. 75, no. 11, pp. 115333, Mar 2007. Digital object identifier

Conference Paper

  1. S. D. Sifferman, A. F. Briggs, S. J. Maddox, H. P. Nair, and S. R. Bank, "Highly strained, high indium content III-V materials toward 4-micron type-I emitters," Optical Materials Express, 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  2. A. F. Briggs, K. J. Underwood, S. D. Sifferman, J. T. Gopinath, and S. R. Bank, "Comparison of Auger Recombination Across Material Systems with Externally Applied Biaxial Strain," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  3. K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Auger Recombination in Strained Mid-Infrared Quantum Wells," Conf. on Lasers and Electro Optics (CLEO), Washington, DC, May 2020.
  4. A. F. Briggs, S. D. Sifferman, K. J. Underwood, J. T. Gopinath, and S. R. Bank, "Externally Applied Strain on GaSb Based InGaAsSb Quantum Well Membranes," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  5. R. H. El-Jaroudi, N. T. Sheehan, K. M. McNicholas, D. J. Ironside, A. F. Briggs, A. M. Skipper, S. D. Sifferman, and S. R. Bank, "Strain Engineering of Nanomembranes with Amorphous Silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  6. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  7. A. K. Rockwell, Y. Yuan, S. D. March, A. H. Jones, M. E. Woodson, M. Ren, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "III-V Digital Alloys for Mid-IR Photodetectors," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  8. K. J. Underwood, A. F. Briggs, S. D. Sifferman, S. R. Bank, and J. T. Gopinath, "Auger Recombination in Mid-Infrared Active Regions," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  9. S. D. Sifferman, M. Motyka, A. F. Briggs, K. J. Underwood, K. M. McNicholas, R. Kudrawiec, J. T. Gopinath, and S. R. Bank, "Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  10. S. D. Sifferman, A. K. Rockwell, K. M. McNicholas, Y. Sun, R. Salas, S. J. Maddox, H. P. Nair, M. L. Lee, and S. R. Bank, "The effects of a bismuth flux on strained-layer III-V optical materials," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  11. K. M. McNicholas, R. H. El-Jaroudi, A. F. Briggs, S. D. March, S. D. Sifferman, and S. R. Bank, "Growth and properties of B-III-V alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  12. K. M. McNicholas, R. Salas, S. D. Sifferman, D. Jung, M. L. Lee, and S. R. Bank, "Growth rate dependent surface morphology of rare earth arsenide films," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  13. A. K. Rockwell, M. E. Woodson, M. Ren, K. M. McNicholas, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Surfactant-Mediated Epitaxy of III-V Digital Alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  14. A. K. Rockwell, S. J. Maddox, Y. Sun, D. Jung, S. D. Sifferman, S. D. March, M. L. Lee, and S. R. Bank, "Growth and Properties of Broadly-Tunable AlInAsSb Digital Alloys on GaSb," 32nd North American Conference on Molecular Beam Epitaxy (NAMBE), Saratoga Springs, NY, Sep 2016.
  15. A. K. Rockwell, S. J. Maddox, D. Jung, Y. Sun, S. D. Sifferman, W. Sun, M. Ren, J. Guo, J. C. Campbell, M. L. Lee, and S. R. Bank, "The Effect of Period Thickness on AlInAsSb Digital Alloys on GaSb," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  16. (Invited) S. R. Bank, S. D. Sifferman, H. P. Nair, N. T. Sheehan, R. Salas, S. J. Maddox, and A. M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb 2016.
  17. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  18. S. D. Sifferman, R. Salas, S. J. Maddox, H. P. Nair, N. T. Sheehan, E. M. Krivoy, E. S. Walker, and S. R. Bank, "Surfactant-mediated growth of highly strained materials for mid-infrared applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  19. K. M. McNicholas, E. M. Krivoy, R. Salas, S. D. Sifferman, and S. R. Bank, "Tunable, lattice-matched, epitaxial semimetals," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  20. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, M. L. Lee, and S. R. Bank, "Surfactant-Mediated Growth of RE-As:InGaAs Nanocomposites," International Molecular Beam Epitaxy Conf. (IMBE), Flagstaff, AZ, Sep 2014.
  21. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. J. Ironside, E. M. Krivoy, S. J. Maddox, D. Jung, M. L. Lee, and S. R. Bank, "Properties of RE-As:InGaAs Nanocomposites," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  22. S. D. Sifferman, J. W. Schwede, D. C. Riley, R. T. Howe, Z. Shen, N. A. Melosh, and S. R. Bank, "Compositionally-Graded Structures for Photon-Enhanced Thermionic Emitters," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  23. A. M. Crook, H. P. Nair, K. Vijayraghavan, M. A. Wistey, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and S. R. Bank, "Annealing Stability of Nanoparticle-Enhanced Tunnel Junctions for High-Efficiency Solar Cells and Mid-Infrared Lasers," 51st Electronic Materials Conf. (EMC), University Park, PA, Jun 2009.
  24. M. Pelliccione, A. Sciambi, D. Goldhaber-Gordon, S. R. Bank, A. C. Gossard, J. L. Reno, and M. P. Lilly, "Tunneling spectroscopy of a 2D-2D tunnel junction: Towards a local spectroscopic probe of 2D electron systems," American Physical Society (APS) March Meeting, Mar 2009.
  25. A. Sciambi, M. Pelliccione, D. Goldhaber-Gordon, S. R. Bank, A. C. Gossard, M. P. Lilly, and J. L. Reno, "The Virtual Scanning Tunneling Microscope: Induced Tunneling in Bilayer Two-Dimensional Electron Systems," American Physical Society (APS) March Meeting, Mar 2009.
  26. M. A. Wistey, G. J. Burek, U. Singisetti, A. M. Crook, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs," International Conf. on Molecular Beam Epitaxy (MBE), Vancouver, BC, Canada, Aug 2008.
  27. M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, J. Cagnon, S. Stemmer, S. R. Bank, Y. Sun, E. J. Kiewra, D. K. Sadana, A. C. Gossard, and M. J. Rodwell, "Self-aligned III-V MOSFETs for sub-22nm Nodes," SRC Techcon, Austin, TX, Aug 2008.
  28. H. P. Nair, A. M. Crook, J. M. O. Zide, M. P. Hanson, A. C. Gossard, and S. R. Bank, "Nanoparticle-enhanced tunnel junctions for high efficiency mid-infrared lasers," 50th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2008.
  29. A. Sciambi, D. Goldhaber-Gordon, S. R. Bank, and A. C. Gossard, "The Virtual Scanning Tunneling Microscope: A Novel Probe Technique for Imaging Two-Dimensional Electron Systems," American Physical Society (APS) March Meeting, Mar 2008.
  30. M. J. Rodwell, E. Lind, Z. Griffith, A. M. Crook, S. R. Bank, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "On the Feasibility of few-THz Bipolar Transistors," Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM 07. IEEE, pp. 17-21, Sep 2007. Digital object identifier
  31. U. Singisetti, A. M. Crook, E. Lind, M. A. Wistey, J. D. Zimmerman, A. C. Gossard, M. J. Rodwell, and S. R. Bank, "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP," 65th Device Research Conf. (DRC), South Bend, IN, Jun 2007.
  32. (Plenary) M. J. Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "Frequency limits of InP-based integrated circuits," 19th International Conf. on Indium-Phosphide and Related Materials (IPRM), Matsue, Japan, pp. 9-13, May 2007. Digital object identifier
  33. A. C. Gossard, M. P. Hanson, J. M. O. Zide, J. D. Zimmerman, S. R. Bank, E. Brown, and M. J. Rodwell, "Metal/semiconductor Heterostructures for Terahertz Applications," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.