Publications

Displaying 70 publications
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Journal Article

  1. F. He, E. S. Walker, Y. Zhou, R. D. Montano, S. R. Bank, and Y. Wang, "Phase transition in epitaxial bismuth nanofilms," Applied Physics Letters, vol. 117, no. 7, pp. 073103, Aug 2020. Digital object identifier
  2. R. H. El-Jaroudi, K. M. McNicholas, A. F. Briggs, S. D. Sifferman, L. J. Nordin, and S. R. Bank, "Room-temperature photoluminescence and electroluminescence of 1. 3-\&microm-range BGaInAs quantum wells on GaAs substrates," Applied Physics Letters, vol. 117, pp. 021102, Jul 2020. Digital object identifier
  3. K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Strain dependence of Auger recombination in 3 \&microm GaInAsSb/GaSb type-I active regions," Applied Physics Letters, vol. 116, pp. 262103, Jun 2020. Digital object identifier
  4. F. He, E. S. Walker, Y. Zhou, S. E. Muschinske, S. R. Bank, and Y. Wang, "Quantum confinement of coherent acoustic phonons in transferred single-crystalline bismuth nanofilms," Applied Physics Letters, vol. 116, no. 26, pp. 263101, Jun 2020. Digital object identifier
  5. F. He, N. T. Sheehan, S. R. Bank, and Y. Wang, "Giant electron-phonon coupling detected under surface plasmon resonance in Au film," Opt. Lett., vol. 44, no. 18, pp. 4590-4593, Sep 2019. Digital object identifier
  6. J. Jeong, X. Meng, A. K. Rockwell, S. R. Bank, W. Hsieh, J. Lin, and Y. Wang, "Picosecond transient thermoreflectance for thermal conductivity characterization," Nanoscale and Microscale Thermophysical Engineering, vol. 0, no. 0, Feb 2019. Digital object identifier
  7. K. Chen, X. Meng, F. He, Y. Zhou, J. Jeong, N. T. Sheehan, S. R. Bank, and Y. Wang, "Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 4, pp. 348-359, Aug 2018. Digital object identifier
  8. D. Jung, D. J. Ironside, S. R. Bank, A. C. Gossard, and J. E. Bowers, "Effect of growth interruption in 1. 55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy," Journal of Applied Physics, vol. 123, no. 20, pp. 205302, Dec 2018. Digital object identifier
  9. J. Jeong, K. Chen, E. S. Walker, N. Roy, F. He, P. Liu, G. Willson, M. Cullinan, S. R. Bank, and Y. Wang, "In-Plane Thermal Conductivity Measurement with Nanosecond Grating Imaging Technique," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 2, pp. 83-96, Dec 2017. Digital object identifier
  10. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL Materials, vol. 5, no. 9, pp. 096106, Sep 2017. Digital object identifier
  11. K. Chen, N. T. Sheehan, F. He, X. Meng, S. C. Mason, S. R. Bank, and Y. Wang, "Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique," ACS Photonics, vol. 4, pp. 1440-1446, May 2017. Digital object identifier
  12. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  13. R. Salas, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 108, no. 18, pp. 182102, May 2016. Digital object identifier
  14. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  15. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, and S. R. Bank, "Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 106, no. 8, pp. 081103, Feb 2015. Digital object identifier
  16. A. Sciambi, M. Pelliccione, M. P. Lilly, S. R. Bank, A. C. Gossard, L. N. Pfeiffer, K. W. West, D. Goldhaber-Gordon, K. Deguchi, and Y. Mizuguchi, "Vertical Field-Effect Transistor Based on Wavefunction Extension," Phys. Rev. B, vol. 84, no. 8, pp. 085301, Aug 2011. Digital object identifier
  17. A. Sciambi, M. Pelliccione, S. R. Bank, A. C. Gossard, and D. Goldhaber-Gordon, "Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems," APL, vol. 97, no. 13, pp. 132103, Sep 2010. Digital object identifier
  18. G. J. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Height-selective etching for regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1984-1987, Mar 2009. Digital object identifier
  19. U. Singisetti, J. D. Zimmerman, M. A. Wistey, J. Cagnon, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, S. Stemmer, and S. R. Bank, "ErAs epitaxial Ohmic contacts to InGaAs/InP," APL, vol. 94, no. 8, pp. 083505-083505, Feb 2009. Digital object identifier
  20. U. Singisetti, M. A. Wistey, J. D. Zimmerman, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, and S. R. Bank, "Ultralow resistance in situ Ohmic contacts to InGaAs/InP," APL, vol. 93, no. 18, pp. 183502, Nov 2008. Digital object identifier
  21. A. M. Crook, E. Lind, Z. Griffith, M. J. Rodwell, J. D. Zimmerman, A. C. Gossard, and S. R. Bank, "Low resistance, nonalloyed Ohmic contacts to InGaAs," APL, vol. 91, no. 19, pp. 192114, Nov 2007. Digital object identifier
  22. R. D. Averitt, W. J. Padilla, H. Tong. Chen, J. F. O Hara, A. J. Taylor, C. Highstrete, M. L. Lee, J. M. O. Zide, S. R. Bank, A. C. Gossard, M. Anwar, A. J. DeMaria, and M. S. Shur, "Terahertz metamaterial devices," Proc. SPIE, vol. 6772, pp. 677209, Sep 2007. Digital object identifier
  23. H. Tong. Chen, W. J. Padilla, J. M. O. Zide, S. R. Bank, A. C. Gossard, A. J. Taylor, and R. D. Averitt, "Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices," Opt. Lett., vol. 32, no. 12, pp. 1620-1622, Jun 2007. Digital object identifier
  24. M. P. Hanson, S. R. Bank, J. M. O. Zide, J. D. Zimmerman, and A. C. Gossard, "Controlling electronic properties of epitaxial nanocomposites of dissimilar materials," J. Cryst. Growth, vol. 301-302, pp. 4-9, Apr 2007. Digital object identifier
  25. W. Yi, V. Narayanamurti, J. M. O. Zide, S. R. Bank, and A. C. Gossard, "Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study," Phys. Rev. B, vol. 75, no. 11, pp. 115333, Mar 2007. Digital object identifier

Conference Paper

  1. A. F. Briggs, K. J. Underwood, S. D. Sifferman, J. T. Gopinath, and S. R. Bank, "Comparison of Auger Recombination Across Material Systems with Externally Applied Biaxial Strain," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  2. A. M. Skipper, Y. Fang, F. He, A. J. Muhowski, D. J. Ironside, D. Wasserman, Y. Wang, M. J. Rodwell, and S. R. Bank, "Monolithic Integration of Patterned Metal-Dielectric Stacks Overgrown with III-V Semiconductors by Molecular Beam Epitaxy," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  3. S. D. Sifferman, A. F. Briggs, S. J. Maddox, H. P. Nair, and S. R. Bank, "Highly strained, high indium content III-V materials toward 4-micron type-I emitters," Optical Materials Express, 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  4. K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Auger Recombination in Strained Mid-Infrared Quantum Wells," Conf. on Lasers and Electro Optics (CLEO), Washington, DC, May 2020.
  5. A. F. Briggs, S. D. Sifferman, K. J. Underwood, J. T. Gopinath, and S. R. Bank, "Externally Applied Strain on GaSb Based InGaAsSb Quantum Well Membranes," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  6. R. H. El-Jaroudi, N. T. Sheehan, K. M. McNicholas, D. J. Ironside, A. F. Briggs, A. M. Skipper, S. D. Sifferman, and S. R. Bank, "Strain Engineering of Nanomembranes with Amorphous Silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  7. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  8. A. K. Rockwell, Y. Yuan, S. D. March, A. H. Jones, M. E. Woodson, M. Ren, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "III-V Digital Alloys for Mid-IR Photodetectors," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  9. S. D. Sifferman, M. Motyka, A. F. Briggs, K. J. Underwood, K. M. McNicholas, R. Kudrawiec, J. T. Gopinath, and S. R. Bank, "Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  10. K. J. Underwood, A. F. Briggs, S. D. Sifferman, S. R. Bank, and J. T. Gopinath, "Auger Recombination in Mid-Infrared Active Regions," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  11. E. S. Walker, S. Ryul. Na, Y. Sun, C. J. Brennan, F. He, R. H. Roberts, N. Yoon, S. E. Muschinske, S. D. March, A. F. Briggs, D. Wasserman, D. Akinwande, Y. Wang, E. T. Yu, M. L. Lee, K. M. Liechti, and S. R. Bank, "Epitaxial Growth and Transfer of Bismuth and Bismuth Antimonide Thin Films," SRC TECHCON, Austin, TX, Sep 2017.
  12. K. M. McNicholas, R. H. El-Jaroudi, A. F. Briggs, S. D. March, S. D. Sifferman, and S. R. Bank, "Growth and properties of B-III-V alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  13. S. D. Sifferman, A. K. Rockwell, K. M. McNicholas, Y. Sun, R. Salas, S. J. Maddox, H. P. Nair, M. L. Lee, and S. R. Bank, "The effects of a bismuth flux on strained-layer III-V optical materials," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  14. J. Jeong, K. Chen, E. S. Walker, S. R. Bank, and Y. Wang, "Nanosecond Grating Imaging Technique for Measuring Thermal Transport Properties," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  15. K. M. McNicholas, R. Salas, S. D. Sifferman, D. Jung, M. L. Lee, and S. R. Bank, "Growth rate dependent surface morphology of rare earth arsenide films," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  16. A. K. Rockwell, M. E. Woodson, M. Ren, K. M. McNicholas, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Surfactant-Mediated Epitaxy of III-V Digital Alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  17. A. K. Rockwell, S. J. Maddox, Y. Sun, D. Jung, S. D. Sifferman, S. D. March, M. L. Lee, and S. R. Bank, "Growth and Properties of Broadly-Tunable AlInAsSb Digital Alloys on GaSb," 32nd North American Conference on Molecular Beam Epitaxy (NAMBE), Saratoga Springs, NY, Sep 2016.
  18. A. K. Rockwell, S. J. Maddox, D. Jung, Y. Sun, S. D. Sifferman, W. Sun, M. Ren, J. Guo, J. C. Campbell, M. L. Lee, and S. R. Bank, "The Effect of Period Thickness on AlInAsSb Digital Alloys on GaSb," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  19. K. Chen, D. Akinwande, S. R. Bank, and Y. Wang, "A Novel Optical Grating Technique to Measure Photo-Excited Carrier Transport Property in Electronic Materials," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  20. K. Chen, Y. Wang, D. Akinwande, S. R. Bank, and J. Lin, "A novel grating-imaging method to measure carrier diffusion coefficient in graphene," American Physical Society (APS) March Meeting, Baltimore, MD, Mar 2016.
  21. (Invited) S. R. Bank, S. D. Sifferman, H. P. Nair, N. T. Sheehan, R. Salas, S. J. Maddox, and A. M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb 2016.
  22. F. He, R. Salas, S. R. Bank, and Y. Wang, "Phonon Scattering at Nanoparticles in LuAs: InGaAs Nanocomposites," American Physical Society March Meeting (APS), San Antonio, TX, vol. 60, no. 10, Mar 2015.
  23. E. S. Walker, W. Li, S. Guchhait, M. N. Yogeesh, F. He, Y. Wang, D. Akinwande, and S. R. Bank, "In Situ Oxidation of Bismuth Thin Films Grown by Molecular Beam Epitaxy for Device Applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  24. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  25. S. D. Sifferman, R. Salas, S. J. Maddox, H. P. Nair, N. T. Sheehan, E. M. Krivoy, E. S. Walker, and S. R. Bank, "Surfactant-mediated growth of highly strained materials for mid-infrared applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.