Publications

Displaying 7 publications
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Journal Article

  1. J. K. Saha, S. A. A. Taqy, P. K. Sarkar, I. Rahaman, A. W. Arbogast, T. Dey, A. Dolocan, M. R. R. Munna, K. Alam, D. Wasserman, S. R. Bank, and M. A. Wistey, "Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys," J. Vac. Sci. Technol. B, vol. 42, no. 6, pp. 062211, Nov 2024. Digital object identifier
  2. R. C. White, M. Bergthold, A. Muhowski, L. Nordin, I. Okoro, H. Hijazi, L. Feldman, D. Wasserman, and S. R. Bank, "Molecular beam epitaxy of InAsSbBi lattice-matched to InSb toward long-wave infrared sensing," Crystal Growth & Design, vol. 24, no. 21, pp. 8727-8735, Oct 2024. Digital object identifier
  3. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  4. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier

Conference Paper

  1. D. S. Gardner, S. R. Bank, L. L. Goddard, P. Griffin, J. S. Harris, R. Swanson, and J. R. Patel, "On the Luminescence Efficiency of Silicon Diodes," Materials Research Society (MRS) Spring Meeting, San Francisco, CA, Apr 2003.
  2. (Plenary) D. S. Gardner, F. Paillet, T. Karnik, R. Swanson, S. R. Bank, X. Liu, P. Griffin, J. R. Patel, and J. S. Harris, "Silicon-Based Light Emitting Devices," The AVS International Conf. on Microelectronics and Interfaces, Santa Clara, CA, Mar 2003.
  3. D. S. Gardner, S. R. Bank, P. Griffin, J. S. Harris, R. Swanson, and J. R. Patel, "On the Luminescence Efficiency of Silicon Diodes," Optical Amplification and Stimulation in Silicon (OASIS), Trento, Italy, Sep 2002.