Publications

Displaying 6 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  3. A. M. Skipper, P. Petluru, D. J. Ironside, A. M. García, A. J. Muhowski, D. Wasserman, and S. R. Bank, "All-epitaxial, laterally structured plasmonic materials," Applied Physics Letters, vol. 120, no. 16, pp. 161103, Dec 2022. Digital object identifier

Conference Paper

  1. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Feature-Independent Molecular Beam Epitaxy (MBE) Selective Area Regrowth Towards Embedding High Aspect Ratio Microstructures," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  2. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  3. A. M. Skipper, A. H. Jones, M. K. Bergthold, A. J. Muhowski, A. M. García, D. J. Ironside, D. Wasserman, J. C. Campbell, and S. R. Bank, "Selective Area Epitaxy by MBE for Self-Aligned III-V Devices," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.