Publications

Displaying 31 publications
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Journal Article

  1. A. M. Skipper, P. Petluru, D. J. Ironside, A. M. García, A. J. Muhowski, D. Wasserman, and S. R. Bank, "All-epitaxial, laterally structured plasmonic materials," Applied Physics Letters, vol. 120, no. 16, pp. 161103, Dec 2022. Digital object identifier
  2. D. J. Ironside, A. M. Skipper, A. M. García, and S. R. Bank, "Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics," Progress in Quantum Electronics, pp. 100316, Dec 2021. Digital object identifier
  3. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  4. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  5. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  6. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. Kim, and J. S. Harris, "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1. 4 mu;m," PTL, vol. 14, no. 5, pp. 591-593, May 2002. Digital object identifier
  7. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier

Conference Paper

  1. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. M. C. Cassidy, J. Duncan, A. M. García, W. J. Doyle, D. Wasserman, and S. R. Bank, "Selective Area Regrowth for Chipscale Trapped Atom/Ion Quantum Systems," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. B. D. Aguilar, A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Effects of Molecular Beam Epitaxy Selective Area Growth Techniques on III-V Optical Quality," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  4. A. M. García, A. M. Skipper, M. K. Bergthold, and S. R. Bank, "SiO2 Surface Planarization for Selective Area Regrowth of High Aspect Ratio Microstructures," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  5. A. M. García, A. M. Skipper, M. K. Bergthold, and S. R. Bank, "SiO2 Surface Planarization for Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  6. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Feature-Independent Molecular Beam Epitaxy (MBE) Selective Area Regrowth Towards Embedding High Aspect Ratio Microstructures," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  7. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  8. A. M. Skipper, A. H. Jones, M. K. Bergthold, A. J. Muhowski, A. M. García, D. J. Ironside, D. Wasserman, J. C. Campbell, and S. R. Bank, "Selective Area Epitaxy by MBE for Self-Aligned III-V Devices," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  9. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Experimentally-Calibrated Modeling of Molecular Beam Epitaxy Selective Area Regrowth," 63nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  10. A. M. Skipper, A. M. García, D. J. Ironside, D. Wasserman, and S. R. Bank, "Selective Area Doping and Lateral Overgrowth by Solid-Source Molecular Beam Epitaxy," 63nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  11. M. Miscuglio, Z. Hu, S. Li, J. Gu, A. Babakhani, P. Gupta, C. Wong, D. Pan, S. R. Bank, H. Dalir, and V. J. Sorger, "Massive parallelism Fourier-optic convolutional processor," Signal Processing in Photonic Communications (SPPCOM), Washington, DC, Jul 2020.
  12. M. Miscuglio, Z. Hu, S. Li, J. Gu, A. Babakhani, P. Gupta, C. Wong, D. Pan, S. R. Bank, H. Dalir, and V. J. Sorger, "Million-channel parallelism Fourier-optic convolutional filter and neural network processor," Conference on Lasers and Electro-Optics (CLEO), Washington, DC, Jun 2020.
  13. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Optimization of All-MBE Selective Area Epitaxial Overgrowth Method," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  14. A. M. Skipper, P. Petluru, A. M. García, D. J. Ironside, A. J. Muhowski, D. Wasserman, and S. R. Bank, "Mid-Infrared Plasmonic Corrugations," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  15. S. R. Bank, H. B. Yuen, W. Ha, V. Gambin, M. A. Wistey, and J. S. Harris, "Strong Photoluminescence Enhancement of 1. 3 \µm GaInNAs Active Layers by Introduction of Antimony," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.
  16. V. Gambin, V. Lordi, W. Ha, M. A. Wistey, K. Volz, S. R. Bank, H. B. Yuen, and J. S. Harris, "High Intensity 1. 3\—1. 6 \µm Luminescence and Structural Changes on Anneal from MBE Grown (Ga,In)(N,As,Sb)," International Conf. on Molecular Beam Epitaxy (MBE), San Fancisco, CA, Sep 2002.
  17. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," International Conf. on Molecular Beam Epitaxy (MBE), San Francisco, CA, Sep 2002.
  18. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, H. B. Yuen, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," Proc. 18th IEEE International Semiconductor Laser Conf. (ISLC), Garmisch, Germany, Sep 2002.
  19. V. Gambin, W. Ha, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long Wavelength, High Efficiency Photoluminescence from MBE Grown GaInNAsSb," 44th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2002.
  20. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," 60th Device Research Conf. (DRC), Santa Barbara, CA, Jun 2002.
  21. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "Long Wavelength GaInNAs(Sb) Lasers on GaAs," 14th International Conf. on Indium-Phosphide and Related Materials (IPRM), Stockholm, Sweden, May 2002.
  22. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, J. S. Harris, and S. Kim, "Long wavelength GaInNAs(Sb) lasers on GaAs," Lasers and Electro-Optics, 2002. CLEO 02. Technical Digest. Summaries of Papers Presented at the, Long Beach, CA, pp. 269-270, May 2002. Digital object identifier
  23. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "Long Wavelength GaInNAs(Sb) Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Long Beach, CA, May 2002.
  24. V. Lordi, V. Gambin, W. Ha, S. R. Bank, and J. S. Harris, "Examination of N Incorporation into GaInNAs," Materials Research Symposium (MRS), April, Apr 2002.