Publications
Journal Article
- T. Kim, A. M. Skipper, S. R. Bank, and E. T. Yu, "Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions," Journal of Applied Physics, vol. 137, no. 7, pp. 075702, Feb 2025.
- A. M. Garcia, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Experimentally calibrated modeling of periodic supply epitaxy for selective area growth by molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 4, pp. 963-969, Jan 2025.
- H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells," APL, vol. 100, no. 2, pp. 021103, Jan 2012.
- J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007.
- D. B. Jackrel, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, A. J. Ptak, S. W. Johnston, D. J. Friedman, and S. R. Kurtz, "Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy," J. Appl. Phys., vol. 101, pp. 114916-1, Jun 2007.
Conference Paper
- S. J. Maddox, K. M. Yu, A. J. Ptak, H. P. Nair, V. D. Dasika, and S. R. Bank, "Optical and Structural Characterization of InAsBi and InGaAsBi Grown by Molecular Beam Epitaxy," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
- H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Thermal Annealing Induced Optical Quality Enhancement in GaSb-Based Dilute-Nitrides," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
- H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Dilute-Nitride Active Regions on GaSb for Mid-Infrared Semiconductor Diode Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2012.
- H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Room Temperature Photoluminescence from a GaSb-Based Dilute-Nitride QW," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.