Publications

Displaying 88 publications
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Journal Article

  1. R. C. White, L. J. Nordin, A. J. Muhowski, D. Wasserman, and S. R. Bank, "Photoluminescence from InSb1-xBix alloys at extended wavelengths on InSb," Applied Physics Letters, vol. 121, no. 19, pp. 191901, Nov 2022. Digital object identifier
  2. A. J. Muhowski, A. Kamboj, A. F. Briggs, L. J. Nordin, S. R. Bank, and D. Wasserman, "Cascaded InGaSb quantum dot mid-infrared LEDs," Journal of Applied Physics, vol. 131, no. 4, Jan 2022. Digital object identifier
  3. L. J. Nordin, A. Kamboj, E. Simmons, P. Petluru, A. J. Muhowski, A. F. Briggs, S. R. Bank, V. A. Podolskiy, and D. Wasserman, "Active plasmonic optoelectronics," Active Photonic Platforms XIII, Virtual, Aug 2021.
  4. A. F. Briggs, L. J. Nordin, A. J. Muhowski, E. Simmons, P. Dhingra, M. L. Lee, V. A. Podolskiy, D. Wasserman, and S. R. Bank, "Enhanced room temperature infrared LEDs using monolithically integrated plasmonic materials," Optica, vol. 7, no. 10, pp. 1355-1358, Oct 2020. Digital object identifier
  5. R. H. El-Jaroudi, K. M. McNicholas, A. F. Briggs, S. D. Sifferman, L. J. Nordin, and S. R. Bank, "Room-temperature photoluminescence and electroluminescence of 1. 3-\&microm-range BGaInAs quantum wells on GaAs substrates," Applied Physics Letters, vol. 117, pp. 021102, Jul 2020. Digital object identifier
  6. A. F. Briggs, L. J. Nordin, A. J. Muhowski, P. Petluru, D. Silva, D. Wasserman, and S. R. Bank, "Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots," Applied Physics Letters, vol. 116, pp. 061103, Feb 2020. Digital object identifier
  7. L. J. Nordin, K. Li, A. F. Briggs, E. Simmons, S. R. Bank, V. A. Podolskiy, and D. Wasserman, "Enhanced emission from ultra-thin long wavelength infrared superlattices on epitaxial plasmonic materials," Applied Physics Letters, vol. 116, pp. 021102, Jan 2020. Digital object identifier
  8. Z. Dong, R. K. Vinnakota, A. F. Briggs, L. J. Nordin, S. R. Bank, D. A. Genov, and D. Wasserman, "Electrical modulation of degenerate semiconductor plasmonic interfaces," Journal of Applied Physics, vol. 126, no. 4, pp. 043101, Jul 2019. Digital object identifier
  9. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE J. Sel. Top. Quantum Electron., vol. 24, Aug 2018. Digital object identifier
  10. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, pp. 1-7, Mar 2018. Digital object identifier
  11. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials," Applied Physics Letters, vol. 113, no. 10, pp. 102106, Dec 2018. Digital object identifier
  12. M. Ren, S. J. Maddox, M. E. Woodson, J. Chen, S. R. Bank, and J. C. Campbell, "Characteristics of AlxIn1-xAsySb1-y (x:0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Journal of Lightwave Technology, vol. 35, pp. 2380, Jun 2017. Digital object identifier
  13. M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes," Applied Physics Letters, vol. 108, no. 19, pp. 191108, May 2016. Digital object identifier
  14. (Invited) S. J. Maddox, M. Ren, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Recent progress in avalanche photodiodes for sensing in the IR spectrum," Proc. SPIE, vol. 9854, pp. 985405-985405, Apr 2016. Digital object identifier
  15. M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, and J. C. Campbell, "Low-noise AlInAsSb avalanche photodiode," APL, vol. 108, no. 8, pp. 081102, Feb 2016. Digital object identifier
  16. M. Ren, S. J. Maddox, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb/GaSb staircase avalanche photodiode," APL, vol. 108, no. 8, pp. 081101, Feb 2016. Digital object identifier
  17. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  18. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  19. Y. Xin, .C . Y. Lin, Y. Li, H. P. Bae, H. B. Yuen, M. A. Wistey, J. S. Harris, S. R. Bank, and L. F. Lester, "Monolithic 1. 55 \µm GaInNAsSb quantum well passively modelocked lasers," Electron. Lett., vol. 44, no. 9, pp. 581-582, Apr 2008. Digital object identifier
  20. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  21. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  22. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  23. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  24. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  25. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  26. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  27. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  28. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  29. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications," APL, vol. 88, no. 22, pp. 221115, Dec 2006. Digital object identifier
  30. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  31. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells," APL, vol. 88, no. 22, pp. 221913, May 2006. Digital object identifier
  32. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  33. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006. Digital object identifier
  34. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "The role of antimony on properties of widely varying GaInNAsSb compositions," J. Appl. Phys., vol. 99, no. 9, pp. 093504, Dec 2006. Digital object identifier
  35. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005. Digital object identifier
  36. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005. Digital object identifier
  37. M. A. Wistey, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "Nitrogen plasma optimization for high-quality dilute nitrides," J. Cryst. Growth, vol. 278, no. 1-4, pp. 229-233, May 2005. Digital object identifier
  38. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  39. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  40. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, "Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1328-1332, Dec 2005. Digital object identifier
  41. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier

Conference Paper

  1. R. C. White, M. K. Bergthold, I. Okoro, Y. Wang, L. J. Nordin, A. J. Muhowski, A. F. Ricks, D. Wasserman, and S. R. Bank, "Towards Lattice-Matched Narrow Bandgap InAsSbBi Photodetectors," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  2. R. C. White, M. K. Bergthold, A. J. Muhowski, L. J. Nordin, A. F. Ricks, D. Wasserman, and S. R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  3. R. C. White, Q. Meng, M. Lopez, A. Ponnekanti, L. J. Nordin, A. J. Muhowski, D. Wasserman, S. R. Bank, and M. A. Wistey, "Growth and Characterization of InSbBi: A (Potentially) Not So Highly Mismatched Alloy for Wavelength Extension on InSb," 21st International Conference on Molecular Beam Epitaxy (ICMBE), Virtual, Sep 2021.
  4. S. R. Bank, A. F. Briggs, L. J. Nordin, A. J. Muhowski, E. Simmons, P. Dhingra, M. L. Lee, V. A. Podolskiy, and D. Wasserman, "Enhancing mid-IR LED performance with monolithically-integrated epitaxial plasmonics," IEEE Summer Topicals Conference (SUM), Virtual, Jul 2021.
  5. A. F. Briggs, L. J. Nordin, A. J. Muhowski, E. Simmons, P. Dhingra, M. L. Lee, V. A. Podolskiy, D. Wasserman, and S. R. Bank, "Enhanced double heterostructure infrared LEDs using monolithically integrated plasmonic materials," 63nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  6. R. C. White, A. J. Muhowski, L. J. Nordin, D. Wasserman, and S. R. Bank, "Growth Optimization of InSbBi Alloys for Wavelength Extension on InSb," 63nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  7. E. Simmons, L. J. Nordin, K. Li, A. F. Briggs, S. R. Bank, D. Wasserman, and V. A. Podolskiy, "Enhanced emission from ultra-thin long wavelength infrared superlattices on epitaxial plasmonic metamaterials," International Society for Optics and Photonics (SPIE) Nanoscience and Engineering, Aug 2020.
  8. A. J. Muhowski, A. F. Briggs, L. J. Nordin, A. M. Skipper, P. Petluru, S. R. Bank, and D. Wasserman, "Towards Single Photon Counting at Room Temperature with Digital Alloy Avalanche Photodiodes," IEEE Research and Applications of Photonics in Defense (RAPID), Miramar Beach, FL, Aug 2020.
  9. L. J. Nordin, A. F. Briggs, E. Simmons, A. J. Muhowski, S. R. Bank, V. A. Podolskiy, and D. Wasserman, "Monolithic Semiconductor Plasmonic Devices," Novel Optical Materials and Applications (NOMA), Washington, DC, Jul 2020.